Low-capacitance electrostatic discharge protection diodes
First Claim
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1. An apparatus comprising:
- a first conductive layer to provide conductive interconnects for pad diffusion regions and supply diffusion regions in a diode; and
a second conductive layer coupled with the first conductive layer, the second conductive layer including a first portion to couple the pad diffusion regions with a pad and a second portion to couple the supply diffusion regions with a voltage supply,wherein the first and the second conductive layers having conductive lines being parallel to each other in a diode region of the diode,wherein the first portion of the second conductive layer extends less than half way across the diode region from a first side of the diode region, andwherein the second portion of the second conductive layer extends less than half way across the diode region from an opposite side of the diode region.
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Abstract
A reduced capacitance diode. A first conductive layer provides conductive interconnects for pad and supply diffusion regions in a diode. A second conductive layer includes a first portion to couple the pad diffusion regions to a pad and a second portion to couple the supply diffusion regions to a voltage supply. Lines of the first and second conductive layers are substantially parallel to each other in a diode region of the diode. Further, for one aspect, a tap for the diode to be coupled to a supply is wider than a minimum width.
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Citations
7 Claims
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1. An apparatus comprising:
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a first conductive layer to provide conductive interconnects for pad diffusion regions and supply diffusion regions in a diode; and a second conductive layer coupled with the first conductive layer, the second conductive layer including a first portion to couple the pad diffusion regions with a pad and a second portion to couple the supply diffusion regions with a voltage supply, wherein the first and the second conductive layers having conductive lines being parallel to each other in a diode region of the diode, wherein the first portion of the second conductive layer extends less than half way across the diode region from a first side of the diode region, and wherein the second portion of the second conductive layer extends less than half way across the diode region from an opposite side of the diode region. - View Dependent Claims (2, 3, 4)
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5. A diode comprising:
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a first supply diffusion region having a width that is larger than a minimum width associated with supply diffusion regions for a process technology on which the diode is manufactured; a first metal layer to provide interconnects for pad diffusion regions and supply diffusion regions including the first supply diffusion region; and a second metal layer including a first portion to couple the pad diffusion regions with a pad, and a second portion to couple the supply diffusion regions with a voltage supply, wherein the first and the second metal layers having metal lines being parallel to each other in a diode region of the diode, and wherein the first and second portions of the second metal layer having metal lines to extend across less than 50% of the diode region from opposite sides of the diode region. - View Dependent Claims (6, 7)
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Specification