Low-capacitance electrostatic discharge protection diodes

• US 7,847,317 B2
• Filed: 12/31/2002
• Issued: 12/07/2010
• Est. Priority Date: 12/31/2002
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Poon, Steven S., Maloney, Timothy J.
• Primary Examiner(s): Blum; David S
• Application Number:
  US10/335,008
• Publication Number:
  US 20040124473A1
• Time in Patent Office: 2,898 Days
• Field of Search: 257/173, 257/328, 257/355, 257/546, 257/E31.005, 327/565, 327/586
• US Class Current: 257/173
• CPC Class Codes: H01L 27/0255 using diodes as protective elements
• CPC Class Codes: H01L 27/0814 Diodes only

Abstract

A reduced capacitance diode. A first conductive layer provides conductive interconnects for pad and supply diffusion regions in a diode. A second conductive layer includes a first portion to couple the pad diffusion regions to a pad and a second portion to couple the supply diffusion regions to a voltage supply. Lines of the first and second conductive layers are substantially parallel to each other in a diode region of the diode. Further, for one aspect, a tap for the diode to be coupled to a supply is wider than a minimum width.

Claims

1. An apparatus comprising:

a first conductive layer to provide conductive interconnects for pad diffusion regions and supply diffusion regions in a diode; and

a second conductive layer coupled with the first conductive layer, the second conductive layer including a first portion to couple the pad diffusion regions with a pad and a second portion to couple the supply diffusion regions with a voltage supply,

wherein the first and the second conductive layers having conductive lines being parallel to each other in a diode region of the diode,

wherein the first portion of the second conductive layer extends less than half way across the diode region from a first side of the diode region, and

wherein the second portion of the second conductive layer extends less than half way across the diode region from an opposite side of the diode region.

2. The apparatus of claim 1, wherein the supply diffusion regions having a width which is larger than a minimum width associated with the supply diffusion regions for a process technology on which the diode is manufactured.

3. The apparatus of claim 1, wherein the pad diffusion regions having a minimum width associated with the pad diffusion regions for a process technology on which the diode is manufactured.

4. The apparatus of claim 1, wherein each of the first and the second portions of the second conductive layer includes conductive lines that extend across the entire diode region.

5. A diode comprising:

a first supply diffusion region having a width that is larger than a minimum width associated with supply diffusion regions for a process technology on which the diode is manufactured;

a first metal layer to provide interconnects for pad diffusion regions and supply diffusion regions including the first supply diffusion region; and

a second metal layer including a first portion to couple the pad diffusion regions with a pad, and a second portion to couple the supply diffusion regions with a voltage supply,

wherein the first and the second metal layers having metal lines being parallel to each other in a diode region of the diode, and

wherein the first and second portions of the second metal layer having metal lines to extend across less than 50% of the diode region from opposite sides of the diode region.

6. The diode of claim 5, wherein the pad diffusion regions have a width equal to a minimum width for the pad diffusion regions associated with the process technology on which the diode is fabricated.

7. The diode of claim 5, wherein the first and second portions of the second metal layer having metal lines to extend across an entire width of the diode region and the width of the supply diffusion region is at least 100% larger than a minimum width for the supply diffusion region.