Dense chevron non-planar field effect transistors and method

• US 7,847,320 B2
• Filed: 11/14/2007
• Issued: 12/07/2010
• Est. Priority Date: 11/14/2007
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Nowak, Edward J., Anderson, Brent A., Bryant, Andres
• Primary Examiner(s): Tran; Minh-Loan T
• Assistant Examiner(s): Sengdara; Vongsavanh
• Application Number:
  US11/939,574
• Publication Number:
  US 20090121291A1
• Time in Patent Office: 1,119 Days
• Field of Search: 257/202, 257/204, 257/206, 257/401, 257/E27.108, 257/E29.052, 257/E29.12, 257/E29.13, 257/E29.136, 257/E29.137
• US Class Current: 257/202
• CPC Class Codes: H01L 21/823412 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
• CPC Class Codes: H01L 27/0207 Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

Disclosed are embodiments of semiconductor structure and a method of forming the semiconductor structure that simultaneously maximizes device density and avoids contacted-gate pitch and fin pitch mismatch, when multiple parallel angled fins are formed within a limited area on a substrate and then traversed by multiple parallel gates (e.g., in the case of stacked, chevron-configured, CMOS devices). This is accomplished by using, not a minimum lithographic fin pitch, but rather by using a fin pitch that is calculated as a function of a pre-selected contacted-gate pitch, a pre-selected fin angle and a pre-selected periodic pattern for positioning the fins relative to the gates within the limited area. Thus, the disclosed structure and method allow for the conversion of a semiconductor product design layout with multiple, stacked, planar FETs in a given area into a semiconductor product design layout with multiple, stacked, chevron-configured, non-planar FETs in the same area.

Claims

1. An integrated circuit structure comprising:

a substrate;

a limited area within said substrate, said limited area being essentially rectangular in shape;

multiple parallel angled semiconductor fins on said substrate diagonally traversing in said limited area, each of said fins comprising a discrete linear structure; and

multiple parallel gates on said substrate extending laterally across a width of said limited area and traversing said fins,

wherein said gates have a pre-selected first pitch,

wherein at least one of said fins is traversed by more than one of said gates,

wherein said fins are positioned diagonally relative to said gates at a pre-selected angle and according to a pre-selected periodic pattern with none of said fins being only partially traversed by a gate and none of said gates traversing an end of a fin, and

wherein said fins further have a second pitch that is predetermined, based on said angle and said first pitch, in order to achieve said periodic pattern.

2. The structure according to claim 1, wherein said second pitch is approximately equal to said first pitch multiplied by the cosine of said angle.

3. The structure according to claim 1, wherein said angle is other than 90 degrees.

4. The structure according to claim 1,

wherein said periodic pattern repeats within said limited area at every gate and with every fin, and

wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin to a second intersecting point between a second gate adjacent to said first gate and a second fin adjacent to said first fin, a second side of said right triangle extends along said second gate from said second intersecting point to a third intersecting point between said first fin and said second gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle is equal to said second pitch.

5. An integrated circuit structure comprising:

a substrate;

a limited area within said substrate, said limited area being essentially rectangular in shape;

multiple parallel angled semiconductor fins on said substrate in said limited area, each of said fins comprising a discrete linear structure; and

multiple parallel gates on said substrate extending laterally across a width of said limited area and traversing said fins,

wherein said gates have a pre-selected first pitch,

wherein at least one of said fins is traversed by more than one of said gates,

wherein said fins are positioned diagonally relative to said gates at a pre-selected angle and according to a pre-selected periodic pattern with none of said fins being only partially traversed by a gate and none of said gates traversing an end of a fin,

wherein said pre-selected periodic pattern repeats within said limited area at every Nth gate and at every Mth fin,

wherein N and M are pre-selected whole numbers greater than zero and at least one of N and M is greater than 1, and

wherein said fins further have a second pitch that is predetermined, based on said angle, a ratio of N over M, and said first pitch, in order to achieve said periodic pattern.

6. The structure according to claim 5, wherein said second pitch is approximately equal to said ratio of N/M multiplied by said first pitch multiplied by the cosine of said angle.

7. The structure according to claim 5, wherein said angle is other than 90 degrees.

8. The structure according to claim 5, wherein N is equal to 2 and M is equal to 1, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second gate adjacent to said first gate and to a second intersecting point between a third gate adjacent to said second gate and a second fin adjacent to said first fin, a second side of said right triangle extends along said third gate from said second intersecting point to a third intersecting point between said first fin and said third gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals said second pitch.

9. The structure according to claim 5, wherein N is equal to 1 and M is equal to 2 and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second fin adjacent to said first fin and to a second intersecting point between a second gate adjacent to said first gate and a third fin adjacent to said second fin, a second side of said right triangle extends along said second gate from said second intersecting point through said second fin to a third intersecting point between said first fin and said second gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals two times said second pitch.

10. The structure according to claim 5, wherein N is equal to 1 and M is equal to 3, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second fin adjacent to said first fin, through a third fin adjacent to said second fin, and to a second intersecting point between a second gate adjacent to said first gate and a fourth fin adjacent to said third fin, a second side of said right triangle extends along said second gate from said second intersecting point through said second fin and said third fin to a third intersecting point between said first fin and said second gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals three times said second pitch.

11. The structure according to claim 5, wherein N is equal to 2 and M is equal to 3, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second gate adjacent to said first gate, through a second fin adjacent to said first fin, through a third fin adjacent to said second fin, and to a second intersecting point between a third gate adjacent to said second gate and a fourth fin adjacent to said third fin, a second side of said right triangle extends along said third gate from said second intersecting point through said second fin and said third fin to a third intersecting point between said first fin and said third gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals three times said second pitch.

12. An integrated circuit structure comprising:

a substrate;

a limited area within said substrate, said limited area being essentially rectangular in shape;

multiple parallel angled semiconductor fins on said substrate in diagonally traversing said limited area, each of said fins comprising a discrete linear structure and at least some of said fins having different lengths;

multiple parallel gates on said substrate extending laterally across a width of said limited area and traversing said fins,

wherein said gates have a pre-selected first pitch,

wherein at least one of said fins is traversed by more than one of said gates,

wherein said fins are positioned diagonally relative to said gates at a pre-selected angle and according to a pre-selected periodic pattern with none of said fins being only partially traversed by a gate and none of said gates traversing an end of a fin,

wherein said pre-selected periodic pattern repeats within said limited area at every Nth gate and at every Mth fin, N and M being pre-selected whole numbers greater than zero, and

wherein said fins further have a second pitch that is predetermined, based on said angle, a ratio of N over M, and said first pitch, in order to achieve said periodic pattern.

13. The structure according to claim 12, wherein said second pitch is approximately equal to said ratio of N/M multiplied by said first pitch multiplied by the cosine of said angle.

14. The structure according to claim 12, wherein said angle is other than 90 degrees.

15. The structure according to claim 12, wherein N is equal to 1 and M is equal to 1, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin to a second intersecting point between a second gate adjacent to said first gate and a second fin adjacent to said first fin, a second side of said right triangle extends along said second gate from said second intersecting point to a third intersecting point between said first fin and said second gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle is equal to said second pitch.

16. The structure according to claim 12, wherein N is equal to 2 and M is equal to 1, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second gate adjacent to said first gate and to a second intersecting point between a third gate adjacent to said second gate and a second fin adjacent to said first fin, a second side of said right triangle extends along said third gate from said second intersecting point to a third intersecting point between said first fin and said third gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals said second pitch.

17. The structure according to claim 12, wherein N is equal to 1 and M is equal to 2, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second fin adjacent to said first fin and to a second intersecting point between a second gate adjacent to said first gate and a third fin adjacent to said second fin, a second side of said right triangle extends along said second gate from said second intersecting point through said second fin to a third intersecting point between said first fin and said second gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals two times said second pitch.

18. The structure according to claim 12, wherein N is equal to 1 and M is equal to 3, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second fin adjacent to said first fin, through a third fin adjacent to said second fin, and to a second intersecting point between a second gate adjacent to said first gate and a fourth fin adjacent to said third fin, a second side of said right triangle extends along said second gate from said second intersecting point through said second fin and said third fin to a third intersecting point between said first fin and said second gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals three times said second pitch.

19. The structure according to claim 12, wherein N is equal to 2 and M is equal to 3, and wherein, as a function of said periodic pattern, a first side of a right triangle extends vertically from a first intersecting point between a first gate and a first fin through a second gate adjacent to said first gate, through a second fin adjacent to said first fin, through a third fin adjacent to said second fin, and to a second intersecting point between a third gate adjacent to said second gate and a fourth fin adjacent to said third fin, a second side of said right triangle extends along said third gate from said second intersecting point through said second fin and said third fin to a third intersecting point between said first fin and said third gate, a hypotenuse of said right triangle extends along said first fin from said third intersecting point to said first intersecting point and a length of a bisecting line d through said right triangle equals three times said second pitch.