Backside illuminated image sensor
First Claim
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1. A backside illuminated image sensor, comprising:
- a photodiode formed below a front upper surface of a semiconductor substrate, wherein the photodiode is configured to receive light illuminated from a backside of the semiconductor substrate that generates photoelectric charges;
a reflecting gate formed on the photodiode proximate the front upper surface of the semiconductor substrate, wherein the reflecting gate is configured to reflect light illuminated from the backside of the semiconductor substrate, and wherein the reflecting gate is further configured to receive a bias signal to control a depletion region of the photodiode; and
a transfer gate configured to transfer photoelectric charges from the photodiode to a sensing node of a pixel.
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Abstract
A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the photodiode over the front upper surface of the semiconductor substrate, for reflecting light illuminated from the backside of the substrate and receiving a bias to control a depletion region of the photodiode, and a transfer gate for transferring photoelectric charges from the photodiode to a sensing node of a pixel.
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Citations
28 Claims
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1. A backside illuminated image sensor, comprising:
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a photodiode formed below a front upper surface of a semiconductor substrate, wherein the photodiode is configured to receive light illuminated from a backside of the semiconductor substrate that generates photoelectric charges; a reflecting gate formed on the photodiode proximate the front upper surface of the semiconductor substrate, wherein the reflecting gate is configured to reflect light illuminated from the backside of the semiconductor substrate, and wherein the reflecting gate is further configured to receive a bias signal to control a depletion region of the photodiode; and a transfer gate configured to transfer photoelectric charges from the photodiode to a sensing node of a pixel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A pixel of a backside illuminated image sensor, the pixel comprising:
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a substrate having a front upper surface and a backside; a photodiode configured to generate photoelectric charges in response to light received from the backside of the substrate, wherein the photodiode is formed proximate the front upper surface of the substrate; and a reflecting gate disposed over the photodiode and configured to reflect light received from the backside of the substrate onto a frontside of the photodiode, wherein the reflecting gate is further configured to receive a bias signal to control an extent of a depletion region of the photodiode. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification