×

Backside illuminated image sensor

  • US 7,847,326 B2
  • Filed: 06/27/2008
  • Issued: 12/07/2010
  • Est. Priority Date: 06/29/2007
  • Status: Active Grant
First Claim
Patent Images

1. A backside illuminated image sensor, comprising:

  • a photodiode formed below a front upper surface of a semiconductor substrate, wherein the photodiode is configured to receive light illuminated from a backside of the semiconductor substrate that generates photoelectric charges;

    a reflecting gate formed on the photodiode proximate the front upper surface of the semiconductor substrate, wherein the reflecting gate is configured to reflect light illuminated from the backside of the semiconductor substrate, and wherein the reflecting gate is further configured to receive a bias signal to control a depletion region of the photodiode; and

    a transfer gate configured to transfer photoelectric charges from the photodiode to a sensing node of a pixel.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×