Multi-thickness semiconductor with fully depleted devices and photonic integration
First Claim
1. A semiconductor device, comprising:
- a semiconductor wafer substrate defining a thin region and a thick region;
one or more photonic devices formed in the thick region; and
one or more fully depleted electronic devices formed in the thin region.
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Abstract
Techniques are disclosed that facilitate fabrication of semiconductors including structures and devices of varying thickness. One embodiment provides a method for semiconductor device fabrication that includes thinning a region of a semiconductor wafer upon which the device is to be formed thereby defining a thin region and a thick region of the wafer. The method continues with forming on the thick region one or more photonic devices and/or partially depleted electronic devices, and forming on the thin region one or more fully depleted electronic devices. Another embodiment provides a semiconductor device that includes a semiconductor wafer defining a thin region and a thick region. The device further includes one or more photonic devices and/or partially depleted electronic devices formed on the thick region, and one or more fully depleted electronic devices formed on the thin region. An isolation area can be formed between the thin region and the thick region.
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Citations
21 Claims
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1. A semiconductor device, comprising:
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a semiconductor wafer substrate defining a thin region and a thick region; one or more photonic devices formed in the thick region; and one or more fully depleted electronic devices formed in the thin region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device, comprising:
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a semiconductor wafer substrate defining a thin region and a thick region, wherein the substrate includes a silicon-on-insulator (SOI) configuration having epitaxial silicon on a thick buried oxide; one or more photonic devices formed in the thick region; one or more fully depleted CMOS devices formed in the thin region; and an isolation area formed between the thin region and the thick region; wherein each of the one or more fully depleted CMOS devices has an epitaxial silicon thickness that is thinner than the epitaxial silicon thickness for each of the one or more photonic devices. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21. A semiconductor device, comprising:
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a semiconductor wafer substrate defining a thin region and a thick region; one or more photonic devices formed in the thick region, wherein the one or more photonic devices includes at least one of a ridge waveguide, a channel waveguide, a high index contrast waveguide, and a ring modulator; one or more fully depleted CMOS devices formed in the thin region; and an isolation area formed between the thin region and the thick region.
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Specification