Hall sensor with temperature drift control

• US 7,847,536 B2
• Filed: 08/28/2007
• Issued: 12/07/2010
• Est. Priority Date: 08/31/2006
• Status: Expired due to Fees

• Current Assignee: Itron Global Sarl (Itron, Inc.)
• Original Assignee: Itron, Inc.
• Inventors: Van Wyk, Hartman, Mosser, Vincent, Haddab, Youcef, Kerlain, Alexandre
• Primary Examiner(s): Nguyen; Ha Tran T
• Assistant Examiner(s): ISLA RODAS, RICHARD
• Application Number:
  US11/897,019
• Publication Number:
  US 20080088298A1
• Time in Patent Office: 1,197 Days
• Field of Search: 324/117.H, 324/158.1, 324/117.R, 324/126
• US Class Current: 324/117.00H
• CPC Class Codes: G01D 3/036 on measuring arrangements themselves
• CPC Class Codes: G01D 5/142 using Hall-effect devices measuring magnetic variables using Hall-effect or other galvanomagnetic devices G01R33/06
• CPC Class Codes: G01R 1/44 Modifications of instruments for temperature compensation
• CPC Class Codes: G01R 15/202 using Hall-effect devices Hall elements in arrangements for measuring electrical power G01R21/08
• CPC Class Codes: G01R 33/07 Hall effect devices
• CPC Class Codes: G01R 33/075 Hall devices configured for spinning current measurements
• CPC Class Codes: H10N 52/101 Semiconductor Hall-effect devices
• CPC Class Codes: Y04S 20/30 Smart metering, e.g. specially adapted for remote reading

Abstract

Disclosed are apparatus and methodology for providing approaches to remove or reduce thermal drift of the magnetic sensitivity of Hall sensor devices, to improve the stability of resulting signals of interest. Samples of a particular signal or signals of interest having improved stability make for advantageous use in conjunction with electricity meters. At the same time, associated designs and related components have greater simplicity, for reduced complexity in implementation. Among alternative embodiments, a gating structure selected of various present alternative designs may be used to partially cover, to an intentionally selected degree, an active area of a Hall sensor, so that a zero-drift supply current value may likewise be selected so as to satisfy other criteria which may be applicable to use of the Hall sensor. In other alternative embodiments, a gate structure is used which fully covers the Hall sensor active area, but a gate-control technique is practiced which is based on combined use with an external, relatively high resistance voltage-divider circuitry arrangement, again for eliminating temperature-based drift of the magnetic sensitivity of the Hall sensor arrangement, regardless of the end use to which such Hall sensor is applied.

Claims

1. A Hall sensor with thermal drift control, comprising:

a planar semiconductive material having, respectively, a central magnetic field responsive active area portion and outer perimeter portions;

a plurality of electrical contacts coupled to said outer perimeter portions;

a gate electrode coupled to and covering said central magnetic field responsive active area portion; and

a gate control voltage supply external to said planar semiconductive material, said gate control voltage supply comprising an amplifier having inputs coupled to a pair of said plurality of electrical contacts and having an output responsive to a common mode voltage between said amplifier inputs;

a voltage divider having a pair of inputs and an output, one of said pair of voltage divider inputs being coupled to said output of said amplifier, and said output of said voltage divider being coupled to said gate electrode.

2. A Hall sensor as in claim 1, further combined as the input of an electricity meter.

3. A method for providing a Hall sensor with improved thermal drift characteristics, comprising:

providing a planar semiconductive material having a central magnetic field responsive active area portion and outer perimeter portions;

coupling a plurality of electrical contacts to the outer perimeter portions;

covering a portion of the central magnetic field responsive active area portion with a gate electrode such that a geometric center of the gate electrode is located substantially at a geometric center for the Hall sensor,

providing a gate supply voltage;

coupling the gate electrode to the gate supply voltage;

selecting an operating bias current value for the Hall sensor; and

varying effective characteristics of the gate electrode so that thermal drift characteristics of the Hall sensor are substantially annulled when said operating bias current value is applied to the Hall sensor.

4. A method as in claim 3, wherein said method comprises:

providing the gate supply voltage by coupling the gate electrode to one of the plurality of electrical contacts; and

varying effective gate electrode characteristics by varying the portion of the central magnetic field responsive active area portion covered by the gate electrode.

5. A method as in claim 3, wherein said method comprises:

providing the gate supply voltage as an external thermally stable voltage supply; and

varying effective gate electrode characteristics by varying the thermally stable voltage supply.

6. A method as in claim 5, wherein providing the gate supply voltage as a thermally stable voltage supply comprises:

providing a voltage divider; and

thermally isolating the voltage divider from the planar semiconductive material.

7. A method as in claim 3, wherein:

providing a gate supply voltage comprises;

providing an amplifier having inputs coupled to a pair of the plurality of electrical contacts and having an output responsive to a common mode voltage between the amplifier inputs;

providing a voltage divider having a pair of inputs and an output; and

coupling one of the pair of inputs of the voltage divider to the output of the amplifier; and

further wherein

coupling the gate electrode to the gate current supply comprises coupling the gate electrode to the output of the voltage divider.

8. A method as in claim 7, wherein providing a voltage divider comprises providing a resistive voltage divider.

9. A method as in claim 7, wherein providing a voltage divider comprises providing a voltage divider on the planar semiconductive material.

10. A method as in claim 3, further comprising providing from said Hall sensor an output connected as the input of a meter.

11. A method as in claim 10, wherein the meter is an electricity meter.