Method of verifying photomask data based on models of etch and lithography processes

• US 7,849,423 B1
• Filed: 07/20/2007
• Issued: 12/07/2010
• Est. Priority Date: 07/21/2006
• Status: Expired due to Fees

• Current Assignee: Cadence Design Systems Incorporated (Cadence Group)
• Original Assignee: Cadence Design Systems Incorporated (Cadence Group)
• Inventors: Joshi, Devendra, Carrero, Jesus O., Fornari, Paul A., Yenikaya, Bayram, Sezginer, Abdurrahman
• Primary Examiner(s): Lin; Sun J
• Assistant Examiner(s): Memula; Suresh
• Application Number:
  US11/781,108
• Time in Patent Office: 1,236 Days
• Field of Search: 716/2, 716/5, 716/19
• US Class Current: 716/132
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Abstract

A photomask dataset corresponding to a target-pattern is verified by simulating a resist-pattern that will be formed in a resist layer by a lithography process, simulating an etched-pattern that will be etched in a layer by a plasma process wherein said simulation comprises calculating a flux of particles impacting a feature, and determining whether the etched-pattern substantially conforms to the target-pattern.

Claims

1. A method of verifying a photomask dataset corresponding to a target-pattern, the method comprising:

obtaining a target polygon having a plurality of vertices and edges;

approximating the target polygon with bounded curvature to create an etch target curve for a wafer;

defining a set of etch target points on the etch target curve;

using a mathematical model of an etch-process to define a set of photoresist points corresponding to the set of etch target points, the mathematical model comprising a model of sidewall effects of an etchant;

obtaining a photoresist curve from the set of photoresist points; and

storing the photoresist curve on a non-transitory computer readable medium.

2. A method according to claim 1, wherein the step of using a mathematical model comprises calculating an optical image formed in a resist layer.

3. A method according to claim 1, wherein the step of using a mathematical model comprises calculating an image formed by an electron beam.

4. A method according to claim 1, wherein the step of using a mathematical model comprises simulating an etched-pattern that will be etched in a layer for more than one dose and defocus value, and a set of photoresist points are defined for each dose and defocus value.

5. A method according to claim 1, wherein the step of using a mathematical model further comprises at least one of:

checking if an image slope is in an acceptable range of values; and

checking if a mask error factor is in an acceptable range of values.

6. A method according to claim 1, further comprising determining an etched-pattern from the photoresist curve, wherein the step of determining the etched-pattern comprises:

checking if a feature in the target-pattern is absent in the etched-pattern;

checking if a feature in the target-pattern is broken into more than one disjoint features in the etched-pattern that;

checking if more than one features that are disjoint in the target-pattern are merged in the etched-pattern;

checking if a line-feature is pinched;

checking if a dimension of a feature in the etched-pattern is substantially different than a corresponding dimension in the target-pattern;

or

checking if a mask error factor is in an acceptable range of values.

7. A method according to claim 6, wherein a result of checking is logged into a file.

8. A method according to claim 6, wherein the feature is classified according to a geometric property of the feature and results of checking are binned according their classification.

9. A method according to claim 6, wherein a results of checking is displayed graphically, superimposed on at least one of:

the target-pattern, photoresist curve, etched-pattern.

10. A method of verifying a photomask data set corresponding to a target-pattern, the method comprising the following steps in the given order:

approximating the target-pattern with bounded curvature to create an etch target curve for a wafer;

defining a set of etch target points on the etch target curve;

obtaining a photoresist-target from the target-pattern using a mathematical model of the etch-process to define a set of photoresist points corresponding to the set of etch target points and obtaining the photoresist-target from the set of photoresist points;

calculating a lithographic image intensity at a point on the photoresist-target;

determining if the image intensity is in an acceptable range of values; and

storing the photoresist-target on a non-transitory computer readable medium.

11. A method according to claim 10, further comprising at least one of:

checking if an image slope is in an acceptable range of values; and

checking if a mask error factor is in an acceptable range of values.

12. A method according to claim 10, wherein the step of obtaining the photoresist-target comprises calculating the effect of plasma-etching of a material.

13. A method according to claim 10, wherein the step of obtaining the photoresist-target further comprises calculating a rate of material deposition or erosion.

14. A method according to claim 10, wherein step the step of obtaining the photoresist-target further comprises calculating a flux of particles impacting a feature.

15. A method according to claim 10, wherein the step of calculating the lithographic image intensity comprises calculating an optical image formed in a resist layer.

16. A method according to claim 10, wherein the step of calculating the lithographic image intensity comprises calculating an image formed by an electron beam.

17. A method according to claim 10, wherein the steps of calculating the lithographic image intensity and determining if the image intensity is in the acceptable range of values are repeated for more than one set of values of dose and defocus.

18. A method according to claim 10, wherein the acceptable range of values is determined from an image slope and at least one of:

an edge-placement tolerance;

a critical-dimension tolerance.

19. A method according to claim 10, wherein a result of determining is logged into a file.

20. A method according to claim 10, wherein the feature is classified according to a geometric property of the feature and results of determining are binned according their classification.

21. A method according to claim 20, wherein a results of determining is displayed graphically, superimposed on at least one of:

the target-pattern, photoresist-target.