UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
First Claim
1. A method of forming a semiconductor device in damascene processing, comprising:
- receiving in a processing chamber a semiconductor device substrate comprising a carbon-containing low-k dielectric layer having formed therein a trench, the trench having sidewalls and a bottom;
exposing the sidewalls and bottom of the trench to UV radiation;
whereby process induced low-k dielectric damage in the trench is repaired.
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Accused Products
Abstract
A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing a carbon-containing low-k dielectric layer on a substrate and forming a trench in the low-k dielectric layer, the trench having sidewalls ending at a bottom. The trench is then exposed to UV radiation and, optionally a gas phase source of —CH3 groups, to repair damage to the carbon-containing low-k material of the trench sidewalls and bottom caused by the trench formation process (generally etching, ashing, and wet or dry cleaning). A similar treatment, with or without the gas phase source of —CH3 groups, may be applied to repair damage caused in a subsequent planarization operation.
595 Citations
22 Claims
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1. A method of forming a semiconductor device in damascene processing, comprising:
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receiving in a processing chamber a semiconductor device substrate comprising a carbon-containing low-k dielectric layer having formed therein a trench, the trench having sidewalls and a bottom; exposing the sidewalls and bottom of the trench to UV radiation; whereby process induced low-k dielectric damage in the trench is repaired. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification