Thermoelectric devices and applications for the same
First Claim
Patent Images
1. A method of making a thermoelectric power source comprising:
- (a) providing a flexible substrate having an upper surface(b) forming a thermocouple by(i) sputter depositing a thin film of p-type material comprising Ge, Ag, Sb, and Te to form at least one thermoelement on the upper surface of the flexible substrate and(ii) sputter depositing a thin film of an n-type material to form at least one thermoelement positioned on the upper surface of the flexible substrate adjacent the p-type thermoelement; and
(iii) forming an electrically conductive member electrically connecting the first end of the p-type thermoelement in electrical contact with the second end of the n-type thermoelement.
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Abstract
High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.
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Citations
23 Claims
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1. A method of making a thermoelectric power source comprising:
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(a) providing a flexible substrate having an upper surface (b) forming a thermocouple by (i) sputter depositing a thin film of p-type material comprising Ge, Ag, Sb, and Te to form at least one thermoelement on the upper surface of the flexible substrate and (ii) sputter depositing a thin film of an n-type material to form at least one thermoelement positioned on the upper surface of the flexible substrate adjacent the p-type thermoelement; and (iii) forming an electrically conductive member electrically connecting the first end of the p-type thermoelement in electrical contact with the second end of the n-type thermoelement. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of forming a thermoelectric power source comprising:
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forming at least about 500 thermocouples and electrically connecting the thermocouples to one another on an upper surface of a flexible substrate, the forming of the thermocouples comprising; sputter depositing thin films of GAST p-type material comprising Ge, Ag, Sb, and Te, thereby forming p-type thermoelements; sputter depositing thin films of n-type material forming n-type thermoelements alternatingly positioned adjacent the p-type thermoelements; and forming the thermoelectric power source such that it occupies a volume of less than about 10 cm3 and has a power output of at least about 50 μ
W. - View Dependent Claims (19, 20, 21, 22, 23)
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Specification