Nitride semiconductor light emitting diode

• US 7,851,808 B2
• Filed: 10/27/2008
• Issued: 12/14/2010
• Est. Priority Date: 08/29/2006
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung LED Co., Ltd. (Samsung Electronics Co. Ltd.)
• Inventors: Shim, Ji Hye, Kim, Bum Joon, Song, Sang-Yeob
• Primary Examiner(s): Vu; David
• Assistant Examiner(s): Fox; Brandon
• Application Number:
  US12/259,073
• Publication Number:
  US 20090057709A1
• Time in Patent Office: 778 Days
• Field of Search: 257/79, 257/94, 257/E21.006, 257/E21.168, 313/468, 313/630
• US Class Current: 257/79
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Claims

1. A nitride semiconductor light emitting diode (LED) comprising:

an n-type nitride semiconductor layer;

a first electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III;

an active layer formed on the electron emitting layer;

a p-type nitride semiconductor layer formed on the active layer; and

a second electron emitting layer formed between the active layer and the p-type nitride semiconductor layer, the second electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III.

2. A nitride semiconductor light emitting diode (LED) comprising:

a substrate;

an n-type nitride semiconductor layer formed on the substrate;

a first electron emitting layer formed on a portion of the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III;

an active layer formed on the electron emitting layer;

a p-type nitride semiconductor layer formed on the active layer;

a p-electrode formed on the p-type nitride semiconductor layer;

an n-electrode formed on the n-type nitride semiconductor layer where the electron emitting layer is not formed; and

a second electron emitting layer formed between the active layer and the p-type nitride semiconductor layer, the second electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III.

3. A nitride semiconductor light emitting diode (LED) comprising:

a p-electrode;

a p-type nitride semiconductor layer formed on the p-electrode;

an active layer formed on the p-type nitride semiconductor layer;

a first electron emitting layer formed on the active layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III;

an n-type nitride semiconductor layer formed on the electron emitting layer;

a substrate formed on the n-type nitride semiconductor layer;

an n-electrode formed on the substrate; and

a second electron emitting layer formed between the p-type nitride semiconductor layer and the active layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III.