Three dimensional NAND memory
First Claim
Patent Images
1. A monolithic, three dimensional NAND string comprising at least a first memory cell located over a second memory cell, wherein:
- a semiconductor active region of the first memory cell is formed epitaxially on a semiconductor active region of the second memory cell, such that a defined boundary exists between the semiconductor active region of the first memory cell and the semiconductor active region of the second memory cell;
the semiconductor active region of the first memory cell comprises a first pillar comprising a first conductivity type semiconductor region located between second conductivity type semiconductor regions;
the semiconductor active region of the second memory cell comprises a second pillar comprising a first conductivity type semiconductor region located between second conductivity type semiconductor regions;
one second conductivity type semiconductor region in the first pillar directly contacts one second conductivity type semiconductor region in the second pillar; and
the first pillar is not aligned with the second pillar, such that the first pillar extends laterally past the second pillar.
4 Assignments
0 Petitions
Accused Products
Abstract
A monolithic, three dimensional NAND string includes a first memory cell located over a second memory cell. A semiconductor active region of the first memory cell is formed epitaxially on a semiconductor active region of the second memory cell, such that a defined boundary exists between the semiconductor active region of the first memory cell and the semiconductor active region of the second memory cell.
260 Citations
20 Claims
-
1. A monolithic, three dimensional NAND string comprising at least a first memory cell located over a second memory cell, wherein:
-
a semiconductor active region of the first memory cell is formed epitaxially on a semiconductor active region of the second memory cell, such that a defined boundary exists between the semiconductor active region of the first memory cell and the semiconductor active region of the second memory cell; the semiconductor active region of the first memory cell comprises a first pillar comprising a first conductivity type semiconductor region located between second conductivity type semiconductor regions; the semiconductor active region of the second memory cell comprises a second pillar comprising a first conductivity type semiconductor region located between second conductivity type semiconductor regions; one second conductivity type semiconductor region in the first pillar directly contacts one second conductivity type semiconductor region in the second pillar; and the first pillar is not aligned with the second pillar, such that the first pillar extends laterally past the second pillar. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A monolithic, three dimensional NAND string comprising at least a first memory cell located over a second memory cell, wherein:
-
a semiconductor active region of the first memory cell directly contacts a semiconductor active region of the second memory cell; and the semiconductor active region of at least the first memory cell comprises recrystallized polysilicon. - View Dependent Claims (7, 8, 9, 10, 11, 12)
-
-
13. A monolithic, three dimensional NAND string comprising at least a first memory cell located over a second memory cell, wherein:
-
at least one region of the NAND string is planarized;
a semiconductor active region of the first memory cell directly contacts a semiconductor active region of the second memory cell;the semiconductor active region of the first memory cell comprises a first pillar comprising a first conductivity type semiconductor region located between second conductivity type semiconductor regions; the semiconductor active region of the second memory cell comprises a second pillar comprising a first conductivity type semiconductor region located between second conductivity type semiconductor regions; one second conductivity type semiconductor region in the first pillar directly contacts one second conductivity type semiconductor region in the second pillar; the first pillar is not aligned with the second pillar, such that the first pillar extends laterally past the second pillar; and the first pillar comprises recrystallized polysilicon or epitaxially grown silicon on the second pillar. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
-
Specification