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Group III nitride based flip-chip integrated circuit and method for fabricating

  • US 7,851,909 B2
  • Filed: 10/29/2004
  • Issued: 12/14/2010
  • Est. Priority Date: 01/02/2003
  • Status: Expired due to Term
First Claim
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1. A flip-chip integrated circuit comprising:

  • a circuit substrate having a transistor component and a plurality of passive circuit elements on a first surface, wherein said transistor component is integral to said circuit substrate to form an active device connected to function in an amplifier circuit; and

    an active semiconductor device comprising a substrate distinct from said circuit substrate, said active semiconductor device comprising layers of semiconductor material and a plurality of terminals, each of the terminals in electrical contact with one of the layers of semiconductor material, said active semiconductor device flip-chip mounted on said first surface of the circuit substrate, at least one of the terminals electrically connected to the transistor component on the circuit substrate.

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