Method for manufacturing direct bonded SOI wafer and direct bonded SOI wafer manufactured by the method

• US 7,855,129 B2
• Filed: 05/12/2010
• Issued: 12/21/2010
• Est. Priority Date: 12/22/2005
• Status: Active Grant

• Current Assignee: Sumco Corporation
• Original Assignee: Sumco Corporation
• Inventors: Ono, Isoroku, Morita, Etsurou, Okawa, Shinji
• Primary Examiner(s): Nguyen; Ha Tran T
• Assistant Examiner(s): Brown; Valerie
• Application Number:
  US12/778,382
• Publication Number:
  US 20100219500A1
• Time in Patent Office: 223 Days
• Field of Search: 438/459
• US Class Current: 438/459
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

A direct bonded SOI wafer having an entire buried oxide film layer covered and not exposed is manufactured by: (A) forming a laminated body by laminating a semiconductor wafer and a support wafer via an oxide film; and (B) forming a thin-film single crystal silicon layer on the support wafer using a buried oxide film layer by film-thinning the semiconductor wafer to a predetermined thickness. In a process (C) the entire buried oxide film layer is covered by a main surface on the laminating side of the support wafer and the single crystal silicon layer. The covering of the entire buried film layer is carried out by, between process (A) and (B), removing the oxide film formed on the circumferential end edge of the main surface on the laminating side and the chamfered portion to leave the oxide film only on the laminated surface except the circumferential end edge.

Claims

1. A method for manufacturing a direct bonded SOI wafer comprising forming a laminated body having first and second main surfaces by laminating a semiconductor wafer on a laminating side of a support wafer via an oxide film;

and forming a thin-film single crystal silicon layer on said support wafer via a buried oxide film layer by thinning said semiconductor wafer, wherein the film-thinning of the semiconductor wafer is carried out by implanting ions on the main surface on the laminating side of the semiconductor wafer and on a chamfered portion continuing to the first main surface to form an ion implanted area inside the semiconductor wafer and by separating and removing said semiconductor wafer from the thin-film layer in the ion implanted area by applying a heat treatment to the laminated body after the laminating step, and wherein

before the laminated body is formed by lamination, only the center part of the semiconductor wafer is polished so as to form a circumferential end edge in a convex shape on the laminating side, and then an oxide film which is an insulating film, is formed on the surface of the semiconductor wafer by thermal oxidation, and the oxide film formed on the circumferential end edge is removed and the oxide film is left on the laminating side except for the circumferential end edge, and

the entire buried oxide film layer is covered by a main surface on the laminating side of said support wafer and said single crystal silicon layer.

2. A direct bonded SOI wafer manufactured by the method of claim 1.