Radiation imaging element
First Claim
Patent Images
1. A radiation imaging element comprising:
- radiation sensors disposed in a matrix so as to output signal charges corresponding to radiation transmitted through a subject, andthin film field effect transistors for readout of signals from the radiation sensors, wherein;
each thin film field effect transistor comprises at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode;
the active layer comprises at least a first region and a second region which has an electric conductivity larger than an electric conductivity of the first region;
the second region is in contact with the gate insulating layer;
the first region is disposed so as to be electrically connected between the second region and at least one of the source electrode or the drain electrode; and
at least the first region and the second region of the active layer are formed as separate layers on a substrate of the thin film field effect transistor, the layer of the second region is in contact with the gate insulating layer, and the layer of the first region is in contact with at least one of the source electrode or the drain electrode.
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Abstract
A radiation imaging element that includes radiation sensors disposed in a matrix so as to output signal charges corresponding to radiation transmitted through a subject, and TFTs for readout of signals from the radiation sensors, wherein
- the TFT has at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode,
- the active layer has at least a first region and a second region which has an electric conductivity larger than an electric conductivity of the first region,
- the second region is in contact with the gate insulating layer, and
- the first region is disposed so as to be electrically connected between the second region and at least one of the source electrode or the drain electrode.
A radiation imaging element that effectively suppresses noise and also achieves a high quality image is provided.
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Citations
14 Claims
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1. A radiation imaging element comprising:
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radiation sensors disposed in a matrix so as to output signal charges corresponding to radiation transmitted through a subject, and thin film field effect transistors for readout of signals from the radiation sensors, wherein; each thin film field effect transistor comprises at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode; the active layer comprises at least a first region and a second region which has an electric conductivity larger than an electric conductivity of the first region; the second region is in contact with the gate insulating layer; the first region is disposed so as to be electrically connected between the second region and at least one of the source electrode or the drain electrode; and at least the first region and the second region of the active layer are formed as separate layers on a substrate of the thin film field effect transistor, the layer of the second region is in contact with the gate insulating layer, and the layer of the first region is in contact with at least one of the source electrode or the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification
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Current AssigneeSamsung Display Company Limited (Samsung Electronics Co. Ltd.)
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Original AssigneeFujifilm Corporation (Fujifilm Holdings Corporation)
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InventorsTakahashi, Toshiro
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Primary Examiner(s)Porta; David P
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Assistant Examiner(s)Malevic; Djura
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Application NumberUS12/292,482Publication NumberTime in Patent Office761 DaysField of Search250/370.01, 250/370.08, 257/52, 257/57, 257/59, 257/72US Class Current250/370.01CPC Class CodesG01T 1/24 with semiconductor detectors
