Process for depositing organic materials

• US 7,858,144 B2
• Filed: 09/26/2007
• Issued: 12/28/2010
• Est. Priority Date: 09/26/2007
• Status: Active Grant

• Current Assignee: Eastman Kodak Company
• Original Assignee: Eastman Kodak Company
• Inventors: Cowdery-Corvan, Peter J., Levy, David H., Freeman, Diane C.
• Primary Examiner(s): CHEN, BRET P
• Application Number:
  US11/861,618
• Publication Number:
  US 20090081883A1
• Time in Patent Office: 1,189 Days
• Field of Search: 427/58, 427/64, 427/66, 427/255.6, 117/88, 117/98
• US Class Current: 427/58
• CPC Class Codes: B05D 1/60 Deposition of organic layers from vapour phase vapour phase deposition in general C23C14/00, C23C16/00
• CPC Class Codes: B05D 2252/02 of indefinite length
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: C23C 16/545 for coating elongated substrates

Abstract

A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound. The process is carried out substantially at or above atmospheric pressure and at a temperature under 250° C., during deposition of the organic thin film.

Claims

1. A process of making an organic thin film on a substrate by atomic layer deposition, comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material and the second reactive gaseous material is capable of reacting with a surface treated with the first reactive gaseous material to form the thin film, wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound;

wherein the process is carried out substantially at or above atmospheric pressure, wherein the temperature of the substrate during deposition is under 250°

C., and wherein the deposited organic thin film comprises at least 20 atomic weight percent carbon, and

wherein the process is carried out in a deposition system comprising;

(a) a plurality of sources for, respectively, a plurality of gaseous materials comprising at least a first, a second, and a third source for a first, a second, and a third gaseous material, respectively;

(b) at least one delivery head for delivering the plurality of gaseous materials to a substrate receiving thin film deposition and comprising;

(i) a plurality of inlet ports comprising at least a first, a second, and a third inlet port for receiving the first, the second, and the third gaseous material, respectively; and

(ii) an output face separated a distance from the substrate and comprising a plurality of substantially parallel elongated output openings for each of the first, the second, and the third gaseous materials, wherein the delivery head is designed to deliver the first, the second, and the third gaseous materials simultaneously from the elongated output openings in the output face.

2. The process of claim 1 wherein the first reactive gaseous material comprises a metal or metalloid atom.

3. The process of claim 2 wherein the first reactive gaseous material comprises a metal or metalloid atom bonded to carbon, nitrogen, oxygen, or hydrogen.

4. The process of claim 2 wherein the metal or metalloid atom is selected from the group consisting of aluminum, zinc, titanium, and silicon.

5. The process of claim 2 wherein the metal or metalloid atom is in association with a beta-diketonate compound.

6. The process of claim 1 wherein the second reactive gaseous material comprises one or more functional groups selected from the group consisting of hydroxyl groups, thiol groups, and amine groups.

7. The process of claim 1 where the second reactive compound is selected from the group consisting of diols, dithiols, diamines, and quinolinates.

8. The process of claim 1 wherein the organic thin film is an inorganic-organic hybrid thin film.

9. The process of claim 1 wherein the series of gas flows are provided by a deposition device comprising, facing the substrate in plan view, a series of open elongated output openings, substantially in parallel, positioned over the substrate in close proximity thereto, in an output face of the deposition device, the output face spaced within 1 mm from the substrate surface subjected to deposition, wherein optionally there are no exhaust channels between elongated output channels for the first reactive gaseous material and the second reactive gaseous material.

10. The process of claim 1 wherein at least part of a force maintaining a separation between the output face of the delivery head and the substrate surface during thin film deposition is generated due to flows of one or more of the gaseous materials from the delivery head to the substrate surface for thin film deposition and wherein the deposition device further comprises exhaust channels between elongated substantially parallel output openings for the at least the first and the second reactive gaseous materials.

11. The process of claim 1 wherein a given area of the substrate is exposed to a gas flow in a channel for less than 100 milliseconds and wherein relative movement of the substrate to a deposition device is at a speed at least 0.1 cm/sec.

12. The process of claim 1 wherein the volatile compounds can be vaporized at a temperature under 300°

C. at atmospheric pressure.

13. The process of claim 1 wherein a total surface area of the substrate for thin-film material deposition exceeds a total surface area of the output face of the deposition device.

14. The process of claim 1 wherein the substrate or a support for the substrate comprises a moving web.

15. The process of claim 1 wherein the process is in unsealed relationship to ambient atmosphere.

16. The process of claim 1 wherein the process is used to make an insulating layer of an electronic device containing said insulating layer disposed between at least two conductive electrodes.

17. The process of claim 1 wherein the process is used to make a barrier layer protecting an electronic device from its surrounding atmosphere.

18. The process of claim 1 further comprising a substrate support that maintains a surface of the substrate at a separation distance of within 0.3 mm of an output face of a deposition device.

19. The process of claim 17 wherein the electronic device is selected from a group consisting of an integrated circuit, active-matrix display, solar cell, active-matrix imager, sensor, and rf price, identification, or inventory label.