Light emitting device and method of manufacturing the same

• US 7,858,418 B2
• Filed: 10/17/2007
• Issued: 12/28/2010
• Est. Priority Date: 10/18/2006
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Hino, Tomonori, Okano, Nobukata, Kuramochi, Hisayoshi, Kikuchi, Yuichiro, Watanabe, Yoshiaki, Ohashi, Tatsuo
• Primary Examiner(s): Stark; Jarrett J
• Assistant Examiner(s): Tobergte; Nicholas
• Application Number:
  US11/873,763
• Publication Number:
  US 20080128721A1
• Time in Patent Office: 1,168 Days
• Field of Search: 438/29, 438/39, 438/46
• US Class Current: 438/46
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.

Claims

1. A method of manufacturing a light emitting device, comprising the steps of:

(A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and

(B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer,

wherein said method further includes, subsequent to said step (B), the step of;

(C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer; and

(D) forming a first insulating layer over said substrate, the first insulating layer having a first surface in contact with the insulating layer, the first surface and the SOG layer overlap at least on a top surface of part of said second electrode.

2. The method of manufacturing the light emitting device as set forth in claim 1, wherein in said step (C), said exposed part of said first compound semiconductor layer, said exposed part of said active layer, said exposed part of said second compound semiconductor layer, said second electrode, and said first electrode are covered with said SOG layer, and thereafter a first opening and a second opening are formed respectively in that part of said SOG layer which is located over said first electrode and in that part of said SOG layer which is located over said second electrode.

3. The method of manufacturing the light emitting device as set forth in claim 2, wherein in said step (C), said exposed part of said first compound semiconductor layer, said exposed part of said active layer, said exposed part of said second compound semiconductor layer, said second electrode, and said first electrode are covered with the first insulating layer, thereafter said first insulating layer is covered with an SOG layer, and a first opening and a second opening are formed in said SOG layer and said first insulating layer.

4. The method of manufacturing the light emitting device as set forth in claim 2, wherein in said step (C), said exposed part of said first compound semiconductor layer, said exposed part of said active layer, said exposed part of said second compound semiconductor layer, said second electrode, and said first electrode are covered with an SOG layer, thereafter said SOG layer is covered with a second insulating layer, and a first opening and a second opening are formed in said second insulating layer and said SOG layer.

5. The method of manufacturing the light emitting device as set forth in claim 2, wherein in said step (C), said exposed part of said first compound semiconductor layer, said exposed part of said active layer, said exposed part of said second compound semiconductor layer, said second electrode, and said first electrode are covered with a first insulating layer, thereafter said first insulating layer is covered with an SOG layer, said SOG layer is further covered with a second insulating layer, and then a first opening and a second opening are formed in said second insulating layer, said SOG layer and said first insulating layer.

6. A method of manufacturing a light emitting device, comprising the steps of:

(A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and

(B) exposing a part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer,

wherein said method further includes, subsequent to said step (B), the steps of;

(C) covering said exposed part of said first compound semiconductor layer exclusive of an area in which a first electrode is to be formed, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer; and

(D) forming, subsequent to step (C),said first electrode over said area, of said exposed part of said first compound semiconductor layer.

7. The method of manufacturing the light emitting device as set forth in claim 6, wherein

said exposed part of said first compound semiconductor layer, said exposed part of said active layer, said exposed part of said second compound semiconductor layer, and said second electrode are covered with said SOG layer, then a first opening is formed in a part of said SOG layer covering said area of said exposed part of said first compound semiconductor layer, and a second opening is formed in that part of said SOG layer which covers said second electrode, in said step (C);

and

said first electrode is formed on that part of said first compound semiconductor layer which is exposed at a bottom part of said first opening, in said step (D).

8. The method of manufacturing the light emitting device as set forth in claim 7, wherein in said step (C), said exposed part of said first compound semiconductor layer, said exposed part of said active layer, said exposed part of said second compound semiconductor layer, and said second electrode are covered with a first insulating layer, thereafter said first insulating layer is covered with said SOG layer, then said first opening is formed in those parts of said SOG layer and said first insulating layer which cover said area, of said exposed part of said first compound semiconductor layer, and said second opening is formed in those parts of said SOG layer and said first insulating layer which cover said second electrode.

9. The method of manufacturing the light emitting device as set forth in claim 7, wherein in said step (C), said exposed part of said first compound semiconductor layer, said exposed part of said active layer, said exposed part of said second compound semiconductor layer, and said second electrode are covered with said SOG layer, thereafter said SOG layer is covered with a second insulating layer, then said first opening is formed in those parts of said second insulating layer and said SOG layer which cover said part, at which to form said first electrode, of said exposed part of said first compound semiconductor layer, and said second opening is formed in those parts of said second insulating layer and said SOG layer which cover said second electrode.

10. The method of manufacturing the light emitting device as set forth in claim 7, wherein in said step (C), said exposed part of said first compound semiconductor layer, said exposed part of said active layer, said exposed part of said second compound semiconductor layer, and said second electrode are covered with a first insulating layer, thereafter said first insulating layer is covered with said SOG layer, said SOG layer is further covered with a second insulating layer, then said first opening is formed in those parts of said second insulating layer, said SOG layer and said first insulating layer which cover said part, at which to form said first electrode, of said exposed part of said first compound semiconductor layer, and said second opening is formed in those parts of said second insulating layer, said SOG layer and said first insulating layer which cover said second electrode.

11. The method of manufacturing the light emitting device as set forth in claim 6, wherein

said second electrode includes ITO;

and

in said step (C), an SOG material layer is formed as an SOG layer precursor, thereafter said SOG material layer is baked to obtain said SOG layer and, simultaneously, to anneal said ITO constituting said second electrode.

12. The method of manufacturing the light emitting device as set forth in claim 11, wherein the baking conditions for said SOG material layer in said step (C) are either an inert gas atmosphere, a baking temperature of 250 to 700°

C., and a baking time of 5 to 60 min, or an inactive gas atmosphere containing 0.1 to 20 vol % of oxygen gas, a baking temperature of 250 to 700°

C., and a baking time of 5 to 60 min.

13. The method of manufacturing the light emitting device as set forth in claim 6, wherein said second electrode contains silver.

14. The method of manufacturing the light emitting device as set forth in claim 6, further comprising the step of exposing a surface of said SOG layer to a plasma atmosphere after said SOG layer is formed in said step (C).