Light emitting device and method of manufacturing the same
First Claim
1. A method of manufacturing a light emitting device, comprising the steps of:
- (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and
(B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer,wherein said method further includes, subsequent to said step (B), the step of;
(C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer; and
(D) forming a first insulating layer over said substrate, the first insulating layer having a first surface in contact with the insulating layer, the first surface and the SOG layer overlap at least on a top surface of part of said second electrode.
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Abstract
Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.
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Citations
14 Claims
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1. A method of manufacturing a light emitting device, comprising the steps of:
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(A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of; (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer; and (D) forming a first insulating layer over said substrate, the first insulating layer having a first surface in contact with the insulating layer, the first surface and the SOG layer overlap at least on a top surface of part of said second electrode. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing a light emitting device, comprising the steps of:
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(A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the steps of; (C) covering said exposed part of said first compound semiconductor layer exclusive of an area in which a first electrode is to be formed, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer; and (D) forming, subsequent to step (C),said first electrode over said area, of said exposed part of said first compound semiconductor layer. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14)
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Specification