Electronic device, semiconductor device and manufacturing method thereof

• US 7,858,451 B2
• Filed: 01/17/2006
• Issued: 12/28/2010
• Est. Priority Date: 02/03/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kuwabara, Hideaki, Maekawa, Shinji
• Primary Examiner(s): Garber; Charles D
• Assistant Examiner(s): Ahmadi; Mohsen
• Application Number:
  US11/332,351
• Publication Number:
  US 20060170067A1
• Time in Patent Office: 1,806 Days
• Field of Search: 257/E21.017, 257/E21.02, 257/E21.585, 257/E21.109, 257/E21.028
• US Class Current: 438/149
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78678 with inverted-type structure, e.g. with bottom gate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.

Claims

1. A manufacturing method of a semiconductor device comprising:

forming a gate electrode over a substrate having an insulating surface;

forming a gate insulating film over the gate electrode;

forming a first semiconductor layer over the gate insulating film;

forming a second semiconductor layer over the first semiconductor layer, the second semiconductor layer including an impurity element of an n-type or a p-type conductivity;

forming a conductive film pattern over the second semiconductor layer by a droplet-discharging method or a printing method;

irradiating a first region of the conductive film pattern with a laser light, wherein the first region of the conductive film pattern has a smaller width than a width of the entire conductive film pattern; and

removing a second region of the conductive film pattern which is not irradiated with the laser light to form a source wiring and a drain wiring.

2. The method of manufacturing a semiconductor device according to claim 1, wherein the laser light is irradiated such that the laser light crosses the first semiconductor layer.

3. The method of manufacturing a semiconductor device according to claim 1, wherein at least one of the source wiring and the drain wiring has a meandering portion.

4. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is at least one selected from the group consisting of a display device, a camera, a personal computer, a cellular phone, and a mobile information terminal.

5. The method of manufacturing a semiconductor device according to claim 1, wherein the irradiating the first region of the conductive film pattern with the laser light is performed by a laser beam drawing apparatus.

6. A manufacturing method of a semiconductor device comprising:

forming a gate electrode over a substrate having an insulating surface;

forming a gate insulating film over the gate electrode;

forming a first semiconductor layer over the gate insulating film;

forming a second semiconductor layer over the first semiconductor layer, the second semiconductor layer including an impurity element of an n-type or a p-type conductivity;

forming a conductive film pattern over the second semiconductor layer by a droplet-discharging method or a printing method;

irradiating a first region of the conductive film pattern with a laser light, wherein the first region of the conductive film pattern has a smaller width than a width of the entire conductive film pattern;

removing a second region of the conductive film pattern which is not irradiated with the laser light to form a source wiring and a drain wiring; and

etching the first semiconductor layer and the second semiconductor layer using the drain wiring and the source wiring as masks so as to form a channel in a portion of the first semiconductor layer, and to separate the second semiconductor layer into two portions which sandwich the channel.

7. The method of manufacturing a semiconductor device according to claim 6, wherein the laser light is irradiated such that the laser light crosses the first semiconductor layer.

8. The method of manufacturing a semiconductor device according to claim 6, wherein at least one of the source wiring and the drain wiring has a meandering portion.

9. The method of manufacturing a semiconductor device according to claim 6, wherein the semiconductor device is at least one selected from the group consisting of a display device, a camera, a personal computer, a cellular phone, and a mobile information terminal.

10. The method of manufacturing a semiconductor device according to claim 6, wherein the irradiating the first region of the conductive film pattern with the laser light is performed by a laser beam drawing apparatus.

11. A manufacturing method of a semiconductor device comprising:

forming a gate electrode over a substrate having an insulating surface;

forming a gate insulating film over the gate electrode;

forming a first semiconductor layer over the gate insulating film;

forming a second semiconductor layer over the first semiconductor layer, the second semiconductor layer including an impurity element of an n-type or a p-type conductivity;

forming a conductive film pattern over the second semiconductor layer;

irradiating a first region of the conductive film pattern with a laser light, wherein the first region of the conductive film pattern has a smaller width than a width of the entire conductive film pattern; and

removing a second region of the conductive film pattern which is not irradiated with the laser light to form a source wiring and a drain wiring.

12. The method of manufacturing a semiconductor device according to claim 11, wherein the laser light is irradiated such that the laser light crosses the first semiconductor layer.

13. The method of manufacturing a semiconductor device according to claim 11, wherein at least one of the source wiring and the drain wiring has a meandering portion.

14. The method of manufacturing a semiconductor device according to claim 11, wherein the semiconductor device is at least one selected from the group consisting of a display device, a camera, a personal computer, a cellular phone, and a mobile information terminal.

15. The method of manufacturing a semiconductor device according to claim 11, wherein the irradiating the first region of the conductive film pattern with the laser light is performed by a laser beam drawing apparatus.

16. A manufacturing method of a semiconductor device comprising:

forming a gate electrode over a substrate having an insulating surface;

forming a gate insulating film over the gate electrode;

forming a first semiconductor layer over the gate insulating film;

forming a second semiconductor layer over the first semiconductor layer, the second semiconductor layer including an impurity element of an n-type or a p-type conductivity;

forming a conductive film pattern over the second semiconductor layer;

irradiating a first region of the conductive film pattern with a laser light, wherein the first region of the conductive film pattern has a smaller width than a width of the entire conductive film pattern;

removing a second region of the conductive film pattern which is not irradiated with the laser light to form a source wiring and a drain wiring; and

etching the first semiconductor layer and the second semiconductor layer using the drain wiring and the source wiring as masks so as to form a channel in a portion of the first semiconductor layer, and to separate the second semiconductor layer into two portions which sandwich the channel.

17. The method of manufacturing a semiconductor device according to claim 16, wherein the laser light is irradiated such that the laser light crosses the first semiconductor layer.

18. The method of manufacturing a semiconductor device according to claim 16, wherein at least one of the source wiring and the drain wiring has a meandering portion.

19. The method of manufacturing a semiconductor device according to claim 16, wherein the semiconductor device is at least one selected from the group consisting of a display device, a camera, a personal computer, a cellular phone, and a mobile information terminal.

20. The method of manufacturing a semiconductor device according to claim 16, wherein the irradiating the first region of the conductive film pattern with the laser light is performed by a laser beam drawing apparatus.