Manufacturing method of array substrate for liquid crystal display device with color filter layer on thin film transistor

• US 7,858,452 B2
• Filed: 09/14/2009
• Issued: 12/28/2010
• Est. Priority Date: 06/30/2004
• Status: Expired due to Fees

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Display Co., Ltd.
• Inventors: Park, Jong-Jin
• Primary Examiner(s): Parker; Kenneth A
• Assistant Examiner(s): Ho; Anthony
• Application Number:
  US12/559,433
• Publication Number:
  US 20100003776A1
• Time in Patent Office: 470 Days
• Field of Search: 257/59, 257/72, 438/149, 438/151, 349/43
• US Class Current: 438/149
• CPC Class Codes: G02F 1/13458 Terminal pads
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136222 Colour filters incorporated in the active matrix substrate
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Abstract

A method of manufacturing a liquid crystal display device includes forming a gate line and a gate electrode on a substrate, forming a gate insulating layer on substantially an entire surface of the substrate, forming an active layer, an ohmic contact layer, a source electrode, a drain electrode and a data line on the gate insulating layer, forming a black matrix on the first passivation layer, forming a color filter layer on the first passivation layer in the pixel region, forming a second passivation layer on substantially an entire surface of the substrate, forming a photoresist pattern to expose the second passivation layer, removing the exposed second passivation and removing a portion of the first passivation layer contacting the second passivation layer, forming a transparent conductive layer on substantially an entire surface of the substrate, and forming a pixel electrode in the pixel region by removing the photoresist pattern and the transparent conductive layer on the photoresist pattern.

Claims

1. A method of manufacturing a liquid crystal display device, comprising:

forming a gate line and a gate electrode on a substrate through a first mask process;

forming a gate insulating layer on substantially an entire surface of the substrate including the gate line and the gate electrode;

forming an active layer, an ohmic contact layer, a source electrode, a drain electrode and a data line on the gate insulating layer through a second mask process by using a single mask, the data line crossing the gate line to define a pixel region;

forming a first passivation layer on substantially an entire surface of the substrate including the source and drain electrodes and the data line;

forming a black matrix on the first passivation layer over the active layer through a third mask process;

forming a color filter layer on the first passivation layer in the pixel region through a fourth mask process;

forming a second passivation layer on substantially an entire surface of the substrate including the black matrix and the color filter layer;

forming a photoresist pattern to expose the second passivation layer corresponding to the pixel region and to a portion of the drain electrode through a fifth mask process;

removing the exposed second passivation and removing a portion of the first passivation layer contacting the second passivation layer to thereby expose the portion of the drain electrode;

forming a transparent conductive layer on substantially an entire surface of the substrate including the exposed portion of the drain electrode and the photoresist pattern; and

forming a pixel electrode in the pixel region by removing the photoresist pattern and the transparent conductive layer on the photoresist pattern, the pixel electrode contacting the exposed portion of the drain electrode, wherein the pixel electrode is disposed in a region excluding the second passivation layer such that the pixel electrode does not overlap the second passivation layer.

2. The method according to claim 1, wherein the second mask process includes forming a metal pattern over the gate line, the metal pattern contacting the pixel electrode.

3. The method according to claim 1, wherein the first mask process includes forming a gate pad at one end of the gate line, and the second mask process includes forming a data pad at one end of the data line.

4. The method according to claim 3, wherein forming the pixel electrode includes forming a gate pad terminal and a data pad terminal, the gate pad terminal contacting the gate pad, the data pad terminal contacting the data pad.

5. The method according to claim 4, wherein the pixel electrode, the gate pad terminal and the data pad terminal are formed of a transparent conductive material.

6. The method according to claim 4, further comprising forming a columnar spacer on the substrate including the pixel electrode, the columnar spacer disposed over the gate and data lines.

7. The method according to claim 6, wherein the step of forming the columnar spacer includes

forming a first blocking layer covering the gate pad terminal;

and

forming a second blocking layer covering the data pad terminal.

8. The method according to claim 1, wherein the second mask process includes:

depositing an intrinsic amorphous silicon layer, an impurity-doped amorphous silicon layer and a metal layer over the gate insulating layer;

forming a photoresist layer on the metal layer;

disposing the single mask over the photoresist layer, the single mask including a transmitting portion, a blocking portion and a partial transmitting portion;

exposing the photoresist layer through the single mask and developing the photoresist layer to thereby form a photoresist pattern having different thicknesses;

removing portions of the metal layer, the impurity-doped amorphous silicon layer, and the intrinsic amorphous silicon layer exposed by the photoresist pattern;

removing a portion of the photoresist pattern having a thinner thickness to expose the metal layer corresponding to the partial transmitting portion of the single mask;

removing the exposed metal layer to expose the impurity-doped amorphous silicon layer;

removing the exposed impurity-doped amorphous silicon layer; and

removing the remaining photoresist pattern.

9. The method according to claim 1, further comprising forming a semiconductor pattern under the data line by using the single mask, the semiconductor pattern including an intrinsic amorphous silicon layer and an impurity-doped amorphous silicon layer.

10. The method according to claim 1, wherein the second passivation layer is selectively patterned in the pixel region and selectively exposes the color filter layer.

11. The method according to claim 10, further comprising forming a common electrode, the common electrode spaced apart from and coplanar with the pixel electrode.