Method for curing a porous low dielectric constant dielectric film
First Claim
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1. A method of curing a low dielectric constant (low-k) dielectric film on a substrate, comprising:
- forming a low-k dielectric film on a substrate;
exposing said low-k dielectric film to a first infrared (IR) radiation;
exposing said low-k dielectric film to ultraviolet (UV) radiation following said exposure to said first IR radiation; and
exposing said low-k dielectric film to a second infrared (IR) radiation following said exposure to said UV radiation,wherein a dielectric constant of said low-k dielectric film is less than a value of approximately 4.
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Abstract
A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.
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26 Claims
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1. A method of curing a low dielectric constant (low-k) dielectric film on a substrate, comprising:
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forming a low-k dielectric film on a substrate; exposing said low-k dielectric film to a first infrared (IR) radiation; exposing said low-k dielectric film to ultraviolet (UV) radiation following said exposure to said first IR radiation; and exposing said low-k dielectric film to a second infrared (IR) radiation following said exposure to said UV radiation, wherein a dielectric constant of said low-k dielectric film is less than a value of approximately 4. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method of curing a low dielectric constant (low-k) dielectric film on a substrate, comprising:
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forming a low-k dielectric film on a substrate, said low-k dielectric film comprising a structure-forming material and a pore-generating material; substantially removing said pore-generating material from said low-k dielectric film to form a porous low-k dielectric film; generating cross-linking initiators in said porous low-k dielectric film following said removing; and cross-linking said porous low-k dielectric film following said generation of said cross-linking initiators. - View Dependent Claims (26)
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Specification