Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same

• US 7,858,985 B2
• Filed: 05/29/2009
• Issued: 12/28/2010
• Est. Priority Date: 03/11/2003
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kato, Kiyoshi
• Primary Examiner(s): AUDUONG, GENE NGHIA
• Application Number:
  US12/474,766
• Publication Number:
  US 20090236602A1
• Time in Patent Office: 578 Days
• Field of Search: 365/149, 365108-109, 365/184, 365/189.01, 257/66, 257 71- 72, 257365-366, 257/250, 257/296, 257/E29.273, 257/E27.084, 257/E33.053, 438/157, 438/176
• US Class Current: 257/66
• CPC Class Codes: G11C 11/404 with one charge-transfer gate, e.g. MOS transistor, per cell
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 29/7841 with floating body, e.g. programmable transistors
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H10B 12/00 Dynamic random access memory [DRAM] devices

Abstract

An integrated circuit mounting a DRAM which can realize high integration without complicated manufacturing steps. The integrated circuit according to the invention comprises a DRAM in which a plurality of memory cells each having a thin film transistor are disposed. The thin film transistor comprises an active layer including a channel forming region, and first and second electrodes overlapping with each other with the channel forming region interposed therebetween. By controlling a drain voltage of the thin film transistor according to data, it is determined whether to accumulate holes in the channel forming region or not, and data is read out by confirming whether or not holes are accumulated.

Claims

1. A semiconductor device comprising:

a DRAM over a substrate, the DRAM comprising;

a first gate electrode over the substrate;

a first island-shaped semiconductor film over the first gate electrode wherein the first gate electrode and the first island-shaped semiconductor film overlap each other with a first insulating layer interposed therebetween;

a second gate electrode over the first island-shaped semiconductor film wherein the first island-shaped semiconductor film and the second gate electrode overlap each other with a second insulating layer interposed therebetween;

a bit line electrically connected to the first island-shaped semiconductor film; and

a source line electrically connected to the first island-shaped semiconductor film; and

a pixel portion over the substrate, the pixel portion comprising;

a second island-shaped semiconductor film over the substrate;

a third gate electrode over the second island-shaped semiconductor film wherein the second island-shaped semiconductor film and the third gate electrode overlap each other with the second insulating layer;

a wiring electrically connected to the second island-shaped semiconductor film; and

a pixel electrode electrically connected to the wiring.

2. The semiconductor device according to claim 1, wherein the first island-shaped semiconductor film comprises silicon.

3. An electronic device having the semiconductor device according to claim 1, wherein said electronic device is selected from the group consisting of a video camera, a digital camera, a goggle display, a navigation system, a sound reproduction device, a notebook personal computer, a game machine, a portable information device, and an image reproduction device.

4. The semiconductor device according to claim 1, wherein the first gate electrode is connected to a first word line and the second gate electrode is connected to a second word line.

5. A semiconductor device comprising:

a DRAM over a substrate, the DRAM comprising;

a first gate electrode over the substrate;

a first island-shaped semiconductor film over the first gate electrode wherein the first gate electrode and the first island-shaped semiconductor film overlap each other with a first insulating layer interposed therebetween;

a second gate electrode over the first island-shaped semiconductor film wherein the first island-shaped semiconductor film and the second gate electrode overlap each other with a second insulating layer interposed therebetween;

a bit line electrically connected to the first island-shaped semiconductor film; and

a source line electrically connected to the first island-shaped semiconductor film; and

a pixel portion over the substrate, the pixel portion comprising;

a second island-shaped semiconductor film over the substrate;

a third gate electrode over the second island-shaped semiconductor film wherein the second island-shaped semiconductor film and the third gate electrode overlap each other with the second insulating layer;

a wiring electrically connected to the second island-shaped semiconductor film;

a first electrode electrically connected to the wiring;

a light emitting layer over the first electrode; and

a second electrode over the light emitting layer.

6. The semiconductor device according to claim 5, wherein the first island-shaped semiconductor film comprises silicon.

7. An electronic device having the semiconductor device according to claim 5, wherein said electronic device is selected from the group consisting of a video camera, a digital camera, a goggle display, a navigation system, a sound reproduction device, a notebook personal computer, a game machine, a portable information device, and an image reproduction device.

8. The semiconductor device according to claim 5, wherein the first gate electrode is connected to a first word line and the second gate electrode is connected to a second word line.

9. A semiconductor device comprising:

a DRAM comprising;

a first thin film transistor over a substrate, the first thin film transistor comprising a first gate electrode, a first island-shaped semiconductor film and a second gate electrode;

a bit line over the substrate and electrically connected to the first island-shaped semiconductor film; and

a source line over the substrate and electrically connected to a second impurity region of the first island-shaped semiconductor film; and

a pixel portion comprising;

a second thin film transistor over the substrate, the second thin film transistor comprising a second island-shaped semiconductor film and a third gate electrode;

a wiring over the substrate and electrically connected to the second island-shaped semiconductor film; and

a pixel electrode over the substrate and electrically connected to the wiring,

wherein the first gate electrode and the first island-shaped semiconductor film overlap each other with a first insulating layer interposed therebetween,

wherein the first island-shaped semiconductor film and the second gate electrode overlap each other with a second insulating layer interposed therebetween, and

wherein the second island-shaped semiconductor film and the third gate electrode overlap each other with the second insulating layer.

10. The semiconductor device according to claim 9, wherein the first island-shaped semiconductor film comprises silicon.

11. An electronic device having the semiconductor device according to claim 9, wherein said electronic device is selected from the group consisting of a video camera, a digital camera, a goggle display, a navigation system, a sound reproduction device, a notebook personal computer, a game machine, a portable information device, and an image reproduction device.

12. The semiconductor device according to claim 9, wherein the first gate electrode is connected to a first word line and the second gate electrode is connected to a second word line.

13. The semiconductor device according to claim 9, further comprising a third thin film transistor provided between the first thin film transistor and the bit line.

14. The semiconductor device according to claim 9, wherein the second thin film transistor is a thin film transistor for controlling a current supply.

15. The semiconductor device according to claim 9, wherein the first thin film transistor is an n-channel thin film transistor and the second thin film transistor is a p-channel thin film transistor.

16. A semiconductor device comprising:

a DRAM comprising;

a first thin film transistor over a substrate, the first thin film transistor comprising a first gate electrode, a first island-shaped semiconductor film and a second gate electrode;

a bit line over the substrate and electrically connected to the first island-shaped semiconductor film; and

a source line over the substrate and electrically connected to the first island-shaped semiconductor film; and

a pixel portion comprising;

a second thin film transistor over the substrate, the second thin film transistor comprising a second island-shaped semiconductor film and a third gate electrode;

a wiring over the substrate and electrically connected to the second island-shaped semiconductor film;

a first electrode over the substrate and electrically connected to the wiring;

a light emitting layer over the first electrode; and

a second electrode over the light emitting layer,

wherein the first gate electrode and the first island-shaped semiconductor film overlap each other with a first insulating layer interposed therebetween,

wherein the first island-shaped semiconductor film and the second gate electrode overlap each other with a second insulating layer interposed therebetween, and

wherein the second island-shaped semiconductor film and the third gate electrode overlap each other with the second insulating layer.

17. The semiconductor device according to claim 16, wherein the first island-shaped semiconductor film comprises silicon.

18. An electronic device having the semiconductor device according to claim 16, wherein said electronic device is selected from the group consisting of a video camera, a digital camera, a goggle display, a navigation system, a sound reproduction device, a notebook personal computer, a game machine, a portable information device, and an image reproduction device.

19. The semiconductor device according to claim 16, wherein the first gate electrode is connected to a first word line and the second gate electrode is connected to a second word line.

20. The semiconductor device according to claim 16, further comprising a third thin film transistor provided between the first thin film transistor and the bit line.

21. The semiconductor device according to claim 16, wherein the second thin film transistor is a thin film transistor for controlling a current supply.

22. The semiconductor device according to claim 16, wherein the first thin film transistor is an n-channel thin film transistor and the second thin film transistor is a p-channel thin film transistor.