FET-based sensor for detecting ionic material, ionic material detecting device using the FET-based sensor, and method of detecting ionic material using the FET-based sensor
First Claim
1. A FET (field-effect transistor)-based sensor for detecting an ionic material, the sensor comprising:
- a sensing chamber including a reference electrode and a plurality of sensing FETs, wherein the sensing chamber is defined by a lower substrate including the plurality of sensing FETs, sidewalls, and an upper substrate functioning as the reference electrode; and
a reference chamber including a reference electrode and a plurality of reference FETs, wherein the reference chamber is defined by the lower substrate including the plurality of reference FETs, sidewalls, and the upper substrate function as the reference electrode.
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Abstract
Provided are a FET-based sensor for detecting an ionic material, an ionic material detecting device including the FET-based sensor, and a method of detecting an ionic material using the FET-based sensor. The FET-based sensor includes: a sensing chamber including a reference electrode and a plurality of sensing FETs; and a reference chamber including a reference electrode and a plurality of reference FETs. The method includes: flowing a first solution into and out of the sensing chamber and the reference chamber of the FET-based sensor; flowing a second solution expected to contain an ionic material into and out of the sensing chamber while continuously flowing the first solution into and out of the reference chamber; measuring a current in a channel region between the source and drain of each of the sensing and reference FETs; and correcting the current of the sensing FETs.
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Citations
12 Claims
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1. A FET (field-effect transistor)-based sensor for detecting an ionic material, the sensor comprising:
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a sensing chamber including a reference electrode and a plurality of sensing FETs, wherein the sensing chamber is defined by a lower substrate including the plurality of sensing FETs, sidewalls, and an upper substrate functioning as the reference electrode; and a reference chamber including a reference electrode and a plurality of reference FETs, wherein the reference chamber is defined by the lower substrate including the plurality of reference FETs, sidewalls, and the upper substrate function as the reference electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification