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Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed and methods for fabricating same

  • US 7,859,067 B2
  • Filed: 09/18/2007
  • Issued: 12/28/2010
  • Est. Priority Date: 06/04/2003
  • Status: Active Grant
First Claim
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1. A microelectromechanical device, comprising:

  • a substrate;

    a chamber;

    a micromachined mechanical structure at least partially disposed in the chamber;

    a first encapsulation layer comprising a permeable material having a plurality of pores; and

    a second encapsulation layer comprising a semiconductor material disposed over the first encapsulation layer and sealing the chamber by filling the plurality of pores;

    wherein;

    the first encapsulation layer is disposed over both the micromachined mechanical structure and the substrate;

    the first encapsulation layer forms at least a portion of a wall of the chamber;

    the first encapsulation layer comprises a polycrystalline semiconductor material doped with a first impurity with a first conductivity type;

    the semiconductor material of the second encapsulation layer is doped with a second impurity with a second conductivity type;

    the first conductivity type is different than the second conductivity type;

    a portion of the second encapsulation layer having been removed to expose a substantially planar surface;

    the substantially planar surface is adapted to provide a base upon which integrated circuits are formed; and

    a first portion of the substantially planar surface is disposed outside and above the chamber and includes a field region comprising a monocrystalline material and upon which the integrated circuits are formed.

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