Semiconductor device and method of forming embedded passive circuit elements interconnected to through hole vias
First Claim
1. A semiconductor device, comprising:
- a semiconductor die;
a first insulating layer formed around the semiconductor die;
a conductive through hole via (THV) formed in the first insulating layer;
a conductive layer formed over the semiconductor die and first insulating layer to electrically connect the conductive THV to a contact pad on the semiconductor die;
a second insulating layer formed over an active surface of the semiconductor die; and
a first passive circuit element formed over the second insulating layer.
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Accused Products
Abstract
A semiconductor die has a first insulating material disposed around a periphery of the die. A portion of the first insulating material is removed to form a through hole via (THV). Conductive material is deposited in the THV. A second insulating layer is formed over an active surface of the die. A first passive circuit element is formed over the second insulating layer. A first passive via is formed over the THV. The first passive via is electrically connected to the conductive material in the THV. The first passive circuit element is electrically connected to the first passive via. A third insulating layer is formed over the first passive circuit element. A second passive circuit element is formed over the third insulating layer. A fourth insulating layer is formed over the second passive circuit element. A plurality of semiconductor die is stacked and electrically interconnected by the conductive via.
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Citations
24 Claims
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1. A semiconductor device, comprising:
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a semiconductor die; a first insulating layer formed around the semiconductor die; a conductive through hole via (THV) formed in the first insulating layer; a conductive layer formed over the semiconductor die and first insulating layer to electrically connect the conductive THV to a contact pad on the semiconductor die; a second insulating layer formed over an active surface of the semiconductor die; and a first passive circuit element formed over the second insulating layer. - View Dependent Claims (2, 3)
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4. A semiconductor device, comprising:
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a semiconductor die; a first insulating layer formed around the semiconductor die; a conductive through hole via (THV) formed in the first insulating layer; a second insulating layer formed over an active surface of the semiconductor die; a first passive circuit element formed over the second insulating layer; and a first conductive layer formed on the conductive THV, the first passive circuit element being electrically connected to the conductive THV through the first conductive layer. - View Dependent Claims (5, 6)
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7. A semiconductor device, comprising:
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a semiconductor die having a peripheral region; a first insulating material deposited in the peripheral region of the semiconductor die; a conductive through hole via (THV) formed in the first insulating material; a conductive layer formed over the semiconductor die and first insulating material to electrically connect the conductive THV to a contact pad on the semiconductor die; a first insulating layer formed over an active surface of the semiconductor die; a first passive circuit element formed over the first insulating layer; and a first passive via formed on the conductive THV, the first passive circuit element being electrically connected to the conductive THV through the first passive via. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A semiconductor device, comprising:
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a semiconductor die; a first insulating layer formed around the semiconductor die; a conductive through hole via (THV) formed in the first insulating layer; a second insulating layer formed over an active surface of the semiconductor die; a first passive circuit element formed over the second insulating layer; and a first conductive layer formed over the conductive THV, the first passive circuit element being electrically connected to the conductive THV through the first conductive layer. - View Dependent Claims (15, 16, 17, 18)
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19. A semiconductor device, comprising:
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a semiconductor die; a first insulating layer formed around the semiconductor die; a conductive through hole via (THV) formed in the first insulating layer; a first passive circuit element formed over the active surface of the semiconductor die; and a first conductive layer formed over the conductive THV, the first passive circuit element being electrically connected to the conductive THV through the first conductive layer. - View Dependent Claims (20, 21, 22, 23, 24)
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Specification