Pad area and method of fabricating the same
First Claim
Patent Images
1. A pad area, comprising:
- a substrate;
an embossed layer having an embossed pattern disposed on the substrate;
an interconnection layer disposed on the embossed layer and covering at least the embossed pattern of the embossed layer, the interconnection layer covering at least an entire upper surface of the embossed layer, and the interconnection layer being a portion of at least one of source and drain electrodes and a gate electrode; and
a passivation layer covering an edge of the interconnection layer.
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Abstract
A pad area and a method of fabricating the same, wherein the pad area is formed on a substrate to contact a chip on glass (COG) or a chip on flexible printed circuit (COF) with the substrate. Changing a lower structure of the pad area increases contact points between conductive balls and an interconnection layer or reduces a step difference between an interconnection layer and a passivation layer to enhance and ensure electrical connection.
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Citations
19 Claims
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1. A pad area, comprising:
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a substrate; an embossed layer having an embossed pattern disposed on the substrate; an interconnection layer disposed on the embossed layer and covering at least the embossed pattern of the embossed layer, the interconnection layer covering at least an entire upper surface of the embossed layer, and the interconnection layer being a portion of at least one of source and drain electrodes and a gate electrode; and a passivation layer covering an edge of the interconnection layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 18, 19)
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13. A method of fabricating a pad area, comprising:
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forming a substrate; forming a gate insulating layer and an interlayer insulating layer on the substrate, and patterning the layers to form an embossed layer; depositing source and drain electrode materials on the substrate having the embossed layer, and then patterning the electrode materials to form an interconnection layer covering at least the embossed layer; and forming a passivation layer covering an edge of the interconnection layer. - View Dependent Claims (14, 15)
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16. A method of fabricating a pad area, comprising:
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preparing a substrate; forming a semiconductor layer pattern on the substrate; forming a gate insulating layer on the substrate having the semiconductor layer pattern; forming a gate electrode pattern on the gate insulating layer; forming an embossed pattern having a width larger than the gate electrode pattern on the substrate having the gate electrode pattern; forming source and drain electrode materials on the substrate having the embossed pattern, and then patterning the electrode materials to form an interconnection layer covering at least the embossed pattern; and forming a passivation layer covering an edge of the interconnection layer. - View Dependent Claims (17)
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Specification