Method for making a multiple-wavelength opto-electronic device including a superlattice
First Claim
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1. A method for making a multiple-wavelength opto-electronic device comprising:
- providing a substrate;
forming a plurality of active optical devices to be carried by the substrate and stacked in a vertical direction, the plurality of active optical devices operating at different respective wavelengths; and
each active optical device comprising a superlattice comprising a plurality of stacked groups of layers, and each group of layers comprising a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon.
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Abstract
A method for making a multiple-wavelength opto-electronic device which may include providing a substrates and forming a plurality of active optical devices to be carried by the substrate and operating at different respective wavelengths. Moreover, each optical device may include a superlattice comprising a plurality of stacked groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon.
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Citations
25 Claims
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1. A method for making a multiple-wavelength opto-electronic device comprising:
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providing a substrate; forming a plurality of active optical devices to be carried by the substrate and stacked in a vertical direction, the plurality of active optical devices operating at different respective wavelengths; and each active optical device comprising a superlattice comprising a plurality of stacked groups of layers, and each group of layers comprising a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for making a multiple-wavelength opto-electronic device comprising:
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providing a substrate; forming a plurality of active optical detectors to be carried by the substrate and stacked in a vertical direction, the active optical detectors operating at different respective wavelengths; each active optical detector comprising a superlattice comprising a plurality of stacked groups of layers, and each group of layers comprising a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon, wherein the at least one non-semiconductor monolayer is constrained within a crystal lattice of adjacent base semiconductor portions, and at least some semiconductor atoms from opposing base semiconductor portions are chemically bound together through the at least one non-semiconductor monolayer therebetween. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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Specification