Methods of reducing CD loss in a microelectromechanical device

• US 7,863,079 B2
• Filed: 02/05/2008
• Issued: 01/04/2011
• Est. Priority Date: 02/05/2008
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Qualcomm MEMS Technologies Incorporated (Qualcomm, Inc.)
• Inventors: Gudlavalleti, Sauri, Chui, Clarence, Kothari, Manish
• Primary Examiner(s): LE, THAO P
• Application Number:
  US12/026,131
• Publication Number:
  US 20090195856A1
• Time in Patent Office: 1,064 Days
• Field of Search: 438/72, 438/27, 438/29, 438/31, 438/32, 438/65
• US Class Current: 438/72
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

Methods of fabricating an electromechanical systems device that minimize critical dimension (CD) loss in the device are described. The methods provide electromechanical systems devices with improved properties, including high reflectivity.

Claims

1. A method of fabricating an electromechanical systems device, comprising:

providing a sacrificial material;

forming a first metal layer over the sacrificial material;

etching the first metal layer to form at least one first opening in the first metal layer to thereby expose a first surface of the sacrificial material;

forming a second layer over the first surface of the sacrificial material, wherein the second layer has a smaller thickness dimension than the first metal layer; and

etching the second layer to form at least one second opening in the second layer to thereby expose at least a portion of the first surface of the sacrificial material, wherein the second opening has a smaller dimension than the first opening.

2. The method according to claim 1, wherein etching the first metal layer comprises wet-etching.

3. The method according to claim 1, wherein etching the second layer comprises wet-etching.

4. The method according to claim 1, further comprising forming the second layer over at least a portion of the first metal layer.

5. The method according to claim 1, wherein the first metal layer comprises a mirror.

6. The method according to claim 1, wherein the second layer comprises a metal.

7. The method according to claim 6, wherein the second layer comprises a mirror.

8. The method according to claim 6, wherein the first metal layer and the second layer comprise the same metal.

9. The method according to claim 8, wherein the first metal layer and the second layer together have a surface area in contact with the sacrificial material that is larger than that of the first metal layer alone.

10. The method according to claim 1, wherein the first metal layer has a thickness in the range of about 0.75 microns to about 3 microns.

11. The method according to claim 1, wherein the second layer has a thickness in the range of about 0.02 microns to about 0.2 microns.

12. The method according to claim 1, wherein the sacrificial material is provided on an underlying substrate.

13. The method according to claim 12, wherein the underlying substrate comprises a conductive layer.

14. The method according to claim 13, further comprising removing the sacrificial material to thereby form a gap between the first metal layer and the conductive layer.

15. A method for fabricating an electromechanical systems device, comprising:

providing a sacrificial material;

forming a first metal layer over the sacrificial material;

etching the first metal layer to form at least one opening in the first metal layer to thereby expose a first surface area of the sacrificial material;

forming a second layer over the first surface area of the sacrificial material, the second layer having a smaller thickness dimension than the first metal layer;

forming a first masking layer over the second layer and over a portion of the first surface area of the sacrificial material to thereby form an unmasked portion of the second layer over the first surface area; and

etching the unmasked portion of the second layer to form at least one opening in the second layer to thereby expose a second surface area of the sacrificial material, wherein the resulting exposed second surface area of the sacrificial material is smaller than the first surface area of the sacrificial material.

16. The method according to claim 15, further comprising the step of removing the first masking layer.

17. The method according to claim 15, wherein etching the first metal layer comprises wet-etching.

18. The method according to claim 15, wherein etching the second layer comprises wet-etching.

19. The method according to claim 15, wherein the second layer is further formed over at least a portion of the first metal layer.

20. The method according to claim 15, wherein the first metal layer comprises a mirror.

21. The method according to claim 15, wherein the second layer comprises a metal.

22. The method according to claim 21, wherein the second layer is a mirror layer.

23. The method according to claim 15, wherein first metal layer has a thickness in the range of about 0.75 microns to about 3 microns.

24. The method according to claim 15, wherein second layer has a thickness in the range of about 0.02 microns to about 0.2 microns.

25. The method according to claim 15, further comprising:

forming a third layer over at least a portion of the exposed second surface area of the sacrificial material;

forming a second masking layer over the third layer and over a portion of the second surface area of the sacrificial material to thereby form an unmasked portion of the third layer over the second surface area; and

etching the unmasked portion of the third layer to form at least one opening in the third layer to thereby expose a third surface area of the sacrificial material, wherein the third surface area of the sacrificial material is smaller than the second surface area of the sacrificial material.

26. The method according to claim 25, wherein the third layer has a thickness in the range of about 0.02 microns to about 0.2 microns.