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Semiconductor die separation method

  • US 7,863,159 B2
  • Filed: 11/25/2008
  • Issued: 01/04/2011
  • Est. Priority Date: 06/19/2008
  • Status: Expired due to Fees
First Claim
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1. A method for preparing singulated semiconductor die, comprisingproviding a wafer having a front side in which semiconductor chip active regions are formed, the active regions being bounded by saw streets, the active regions having interconnect pads arranged in an interconnect margin along an interconnect edge thereof, the wafer having a thickness greater than a prescribed die thickness;

  • performing a first wafer cutting procedure, wherein cuts are made along a first set of streets from the front side to a depth at least as great as the prescribed die thickness;

    carrying out a die preparation procedure;

    thinning the wafer to the prescribed die thickness; and

    performing a second wafer cutting procedure along a second set of streets, passing completely through the wafer.

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