Microfeature workpieces and methods for forming interconnects in microfeature workpieces
First Claim
1. A method for forming an interconnect in a microfeature workpiece, the microfeature workpiece including a terminal and a substrate with a first side carrying the terminal and a second side opposite the first side, the method comprising:
- constructing an electrically conductive interconnect with a barrier material insulating the interconnect from the substrate and covering an end of the interconnect, the interconnect extending from the terminal to at least an intermediate depth in the substrate with the interconnect electrically connected to the terminal;
removing material from the second side of the substrate and from the barrier material so that a portion of the interconnect projects from the substrate and the interconnect has an exposed, conductive surface at the end of the interconnect;
depositing a first dielectric layer composed of a first material onto the exposed, conductive surface of the portion of the interconnect that projects from the substrate and thereby covering the portion of the interconnect that projects from the substrate; and
depositing a second dielectric layer composed of a second material onto the first dielectric layer such that the second dielectric layer covers the first dielectric layer, wherein the first material is different than the second material, and wherein the first material is removable by a removal process that generally does not affect the second dielectric layer.
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Abstract
Methods for forming interconnects in microfeature workpieces, and microfeature workpieces having such interconnects are disclosed herein. The microfeature workpieces may have a terminal and a substrate with a first side carrying the terminal and a second side opposite the first side. In one embodiment, a method includes (a) constructing an electrically conductive interconnect extending from the terminal to at least an intermediate depth in the substrate with the interconnect electrically connected to the terminal, and (b) removing material from the second side of the substrate so that a portion of the interconnect projects from the substrate.
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Citations
39 Claims
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1. A method for forming an interconnect in a microfeature workpiece, the microfeature workpiece including a terminal and a substrate with a first side carrying the terminal and a second side opposite the first side, the method comprising:
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constructing an electrically conductive interconnect with a barrier material insulating the interconnect from the substrate and covering an end of the interconnect, the interconnect extending from the terminal to at least an intermediate depth in the substrate with the interconnect electrically connected to the terminal; removing material from the second side of the substrate and from the barrier material so that a portion of the interconnect projects from the substrate and the interconnect has an exposed, conductive surface at the end of the interconnect; depositing a first dielectric layer composed of a first material onto the exposed, conductive surface of the portion of the interconnect that projects from the substrate and thereby covering the portion of the interconnect that projects from the substrate; and depositing a second dielectric layer composed of a second material onto the first dielectric layer such that the second dielectric layer covers the first dielectric layer, wherein the first material is different than the second material, and wherein the first material is removable by a removal process that generally does not affect the second dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 25, 36, 37)
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12. A method for forming an interconnect in a microfeature workpiece, the method comprising:
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providing a microfeature workpiece having (a) a substrate with a first side and a second side opposite the first side, (b) a terminal carried by the first side of the substrate, and (c) an electrically conductive interconnect extending from the terminal through the substrate and projecting from the second side of the substrate; applying a first dielectric layer composed of a first material to the second side of the substrate and to an uncoated, conductive surface of the portion of the interconnect projecting from the second side of the substrate; applying a second dielectric layer composed of a second material to the first dielectric layer such that the second dielectric layer covers, wherein the first material and the second material are different materials, and wherein the first material is removable by a first process and the second material is removable by a second process; removing a section of the first and second dielectric layers to expose a surface of the interconnect with the interconnect intersecting a plane defined by the remaining section of the dielectric layers. - View Dependent Claims (13, 14, 15, 16, 17, 18, 26)
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19. A method for forming an interconnect in a microfeature workpiece, the microfeature workpiece including a terminal and a substrate with a first side carrying the terminal and a second side opposite the first side, the method comprising:
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forming an electrically conductive interconnect having a first portion at the terminal and a second portion at an intermediate depth in the substrate, the electrically conductive interconnect being electrically connected to the terminal; thinning the substrate from the second side to at least the second portion of the interconnect; applying a first dielectric layer composed of a first material to the second side of the substrate and thereby covering the second portion of the interconnect after thinning the substrate; applying a second dielectric layer composed of a second material to at least a portion of the first dielectric layer such that the second dielectric layer covers at least a portion of the first dielectric layer that covers the second portion of the interconnect, wherein the first and second materials are different materials, and wherein the first material is susceptible to etching and the second material is resistant to etching. - View Dependent Claims (20, 21, 22, 23, 24, 27, 38, 39)
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28. A method for constructing an interconnect in a microfeature workpiece with an initial dielectric layer attached to a first side of a substrate, the method comprising:
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forming an interconnect extending through the initial dielectric layer and extending to at least an intermediate depth in the substrate; thinning the substrate by removing material from a second side of the substrate and from the interconnect; removing additional material from the second side of the substrate using a selective etchant such that a portion of the interconnect protrudes from the second side of the substrate; forming a recess in the portion of the interconnect by removing a portion of material from the portion of the interconnect; forming a dielectric structure over the portion of the interconnect, the dielectric structure comprising a first dielectric layer and a second dielectric layer on the first dielectric layer, wherein the first and second dielectric layers are composed of different materials; removing sections of the dielectric structure and the portion of the interconnect such that the second dielectric layer is removed to expose the first dielectric layer; and removing the first dielectric layer from the portion of the interconnect to form a recess in the portion of the interconnect to expose conductive fill material in the interconnect. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35)
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Specification