Semiconductor device and manufacturing method thereof

• US 7,863,188 B2
• Filed: 07/14/2006
• Issued: 01/04/2011
• Est. Priority Date: 07/29/2005
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tsurume, Takuya, Dozen, Yoshitaka
• Primary Examiner(s): Nguyen; Ha Tran T
• Assistant Examiner(s): WHALEN, DANIEL B
• Application Number:
  US11/486,135
• Publication Number:
  US 20070023758A1
• Time in Patent Office: 1,635 Days
• Field of Search: 438/459, 438/618, 438/622, 438/624, 438/625, 438/628, 438/629, 438/633, 438/637, 438/672, 438/675, 438/692, 257/621, 257/774, 257/E23.067, 257/E23.174
• US Class Current: 438/667
• CPC Class Codes: H01L 21/304 Mechanical treatment, e.g. grinding, polishing, cutting H01L21/30625 takes precedence
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

It is an object of the present invention to provide a semiconductor device where, even in a case of stacking a plurality of semiconductor elements provided over a substrate, the stacked semiconductor elements can be electrically connected through the substrate, and a manufacturing method thereof. According to one feature of the present invention, a method for manufacturing a semiconductor device includes the steps of selectively forming a depression in an upper surface of a substrate or forming an opening which penetrates the upper surface through a back surface; forming an element group having a transistor so as to cover the upper surface of the substrate and the depression, or the opening; and exposing the element group formed in the depression or the opening by thinning the substrate from the back surface. A means for thinning the substrate can be performed by partially removing the substrate by performing grinding treatment, polishing treatment, etching by chemical treatment, or the like from the back surface of the substrate.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating film over a substrate having at least one depression, wherein the insulating film covers an upper surface of the substrate and the depression;

forming at least one thin film transistor over the insulating film wherein the thin film transistor includes at least source and drain regions;

forming an interlayer insulating film over the thin film transistor wherein the interlayer insulating film covers the depression of the substrate;

forming a first opening in the interlayer insulating film to reach one of the source and drain regions of the thin film transistor;

forming a second opening in the interlayer insulating film, the second opening being provided over the depression;

forming a conductive film over the interlayer insulating film and in the first and second openings wherein the conductive film is connected to the one of the source and drain regions through the first opening and is formed in the depression; and

thinning the substrate from a back surface of the substrate so that a portion of the conductive film is exposed.

2. A method for manufacturing a semiconductor device according to claim 1, wherein the second opening is larger than the first opening.

3. A method for manufacturing a semiconductor device according to claim 1, wherein the depression is formed by irradiating the substrate with laser light.

4. A method for manufacturing a semiconductor device according to claim 1, wherein the second opening is formed by being irradiated with laser light.

5. A method for manufacturing a semiconductor device according to claim 1, wherein the thinning step is performed by grinding treatment, polishing treatment, or etching by chemical treatment.

6. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating film over a substrate having at least one depression, wherein the insulating film covers an upper surface of the substrate and the depression;

forming at least one thin film transistor over the insulating film wherein the thin film transistor includes at least source and drain regions;

forming an interlayer insulating film over the thin film transistor wherein the interlayer insulating film covers the depression of the substrate;

forming a first opening in the interlayer insulating film to reach one of the source and drain regions of the thin film transistor;

forming a first conductive film over the interlayer insulating film and in the first opening;

forming a second opening in the interlayer insulating film, the second opening being provided over the depression;

forming a second conductive film over the interlayer insulating film wherein the second conductive film is formed in the second opening and is connected to the first conductive film; and

thinning the substrate from a back surface of the substrate so that a portion of the second conductive film is exposed.

7. A method for manufacturing a semiconductor device according to claim 6, wherein the second opening is larger than the first opening.

8. A method for manufacturing a semiconductor device according to claim 6, wherein the depression is formed by irradiating the substrate with laser light.

9. A method for manufacturing a semiconductor device according to claim 6, wherein the second opening is formed by being irradiated with laser light.

10. A method for manufacturing a semiconductor device according to claim 6, wherein the second conductive film is formed by a screen printing method, a droplet discharging method, or a dispenser method.

11. A method for manufacturing a semiconductor device according to claim 6, wherein the thinning step is performed by grinding treatment, polishing treatment, or etching by chemical treatment.

12. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating film over an upper surface of a substrate;

forming at least one thin film transistor over the insulating film wherein the thin film transistor includes at least source and drain regions;

forming an interlayer insulating film over the thin film transistor wherein the interlayer insulating film covers the thin film transistor;

forming a first opening in the interlayer insulating film to reach one of the source and drain regions of the thin film transistor;

forming a second opening in the interlayer insulating film after forming the first opening so as to form a depression in the upper surface of the substrate in a different position of the first opening;

forming a conductive film in the first opening and the second opening; and

thinning the substrate from a back surface of the substrate so that a portion of the conductive film is exposed, wherein the second opening has a tapered shape.

13. A method for manufacturing a semiconductor device according to claim 12, wherein the second opening is larger than the first opening.

14. A method for manufacturing a semiconductor device according to claim 12, wherein the second opening is formed by irradiating the substrate with laser light.

15. A method for manufacturing a semiconductor device according to claim 12, wherein the thinning step is performed by grinding treatment, polishing treatment, or etching by chemical treatment.

16. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating film over an upper surface of a substrate;

forming at least one thin film transistor over the insulating film wherein the thin film transistor includes at least source and drain regions;

forming an interlayer insulating film over the thin film transistor wherein the interlayer insulating film covers the thin film transistor;

forming a first opening in the interlayer insulating film to reach one of the source and drain regions of the thin film transistor;

forming a first conductive film over the interlayer insulating film and in the first opening;

forming a second opening in the interlayer insulating film after forming the first opening so as to form a depression in the upper surface of the substrate in a different position of the first opening;

forming a second conductive film over the interlayer insulating film wherein the second conductive film is formed in the second opening and is connected to the first conductive film; and

thinning the substrate from a back surface of the substrate so that a portion of the second conductive film is exposed,

wherein the second opening has a tapered shape.

17. A method for manufacturing a semiconductor device according to claim 16, wherein the second opening is larger than the first opening.

18. A method for manufacturing a semiconductor device according to of claim 16, wherein the second opening is formed by irradiating the substrate with laser light.

19. A method for manufacturing a semiconductor device according to claim 16, wherein the second conductive film is formed by a screen printing method, a droplet discharging method, or a dispenser method.

20. A method for manufacturing a semiconductor device according to claim 16, wherein the thinning step is performed by grinding treatment, polishing treatment, or etching by chemical treatment.