Integrated circuits utilizing amorphous oxides
First Claim
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1. An integrated circuit comprising a P-type region and an N-type region, wherein the N-type region comprises an N-type TFT comprising an amorphous oxide of a compound having(a) a composition when in crystalline state represented by In2-xM3xO3(Zn1−
- yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;
(b) an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein an electron mobility of the amorphous oxide increases when the electron carrier concentration increases; and
(c) controlled oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of a film of the amorphous oxide.
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Abstract
Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.
223 Citations
11 Claims
-
1. An integrated circuit comprising a P-type region and an N-type region, wherein the N-type region comprises an N-type TFT comprising an amorphous oxide of a compound having
(a) a composition when in crystalline state represented by In2-xM3xO3(Zn1− - yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;(b) an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein an electron mobility of the amorphous oxide increases when the electron carrier concentration increases; and (c) controlled oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of a film of the amorphous oxide. - View Dependent Claims (2, 3, 4, 5, 10)
- yM2yO)m, wherein M2 is Mg or Ca;
-
6. An integrated circuit comprising a first region, a second region and an N-type TFT, the first region and the second region form a heterojunction, and the first region and an active layer of the N-type TFT contain an amorphous oxide satisfying the following conditions (a), (b) and (c)
(a) a composition when in crystalline state represented by In2-xM3xO3(Zn1− - yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;(b) an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein an electron mobility of the amorphous oxide increases when the electron concentration increases, and a second region forming a heterojunction to said first region; and (c) controlled oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of a film of the amorphous oxide. - View Dependent Claims (11)
- yM2yO)m, wherein M2 is Mg or Ca;
-
7. An integrated circuit, comprising a circuit, which includes an N-type TFT using amorphous oxide of a compound having
(a) a composition when in crystalline state represented by In2-xM3xO3(Zn1− - yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;(b) an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein an electron mobility of the amorphous oxide increases when the electron concentration increases as an N-type semiconductor and which has less than 10 micro-ampere of current between drain and source terminals when no gate voltage is applied; and (c) controlled oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of a film of the amorphous oxide. - View Dependent Claims (8, 9)
- yM2yO)m, wherein M2 is Mg or Ca;
Specification