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Semiconductor device and a method for manufacturing the same

  • US 7,863,619 B2
  • Filed: 04/21/2009
  • Issued: 01/04/2011
  • Est. Priority Date: 10/01/1993
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a single crystalline semiconductor island on an insulating surface, the single crystalline semiconductor island comprising a source region, a drain region, and a channel region located between the source region and the drain region;

    a gate electrode over the channel region with an insulating layer interposed therebetween;

    an impurity region having a lower impurity concentration than the source region and the drain region, the impurity region being located between the channel region and at least one of the source region and the drain region; and

    a silicon nitride film over the gate electrode and the single crystalline semiconductor island,wherein each of the source region and the drain region comprises a metal silicide region, and the silicon nitride film is in contact with an upper surface of the metal silicide region.

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