Diode having vertical structure and method of manufacturing the same

• US 7,863,638 B2
• Filed: 01/07/2010
• Issued: 01/04/2011
• Est. Priority Date: 10/26/2001
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Electronics, Inc. (LG Corporation)
• Inventors: Yoo, Myung Cheol
• Primary Examiner(s): Tran; Minh-Loan T
• Application Number:
  US12/654,894
• Publication Number:
  US 20100109020A1
• Time in Patent Office: 362 Days
• Field of Search: 257/98, 257/99, 257/103, 257/E33.062, 257/E33.063, 257/E33.068
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/325 characterised by the doping materials
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01S 5/3013 AIIIBV compounds

Abstract

A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Claims

1. A light emitting device comprising:

a GaN layer having a multilayer structure comprising an n-type layer, an active layer, and a p-type layer, the GaN layer having a first surface and a second surface;

a conductive structure on the first surface of the GaN layer, the conductive structure comprising;

a first electrode in contact with the first surface of the GaN layer, the first electrode being configured to reflect light from the active layer back through the second surface of the GaN layer; and

a metal layer comprising Au, wherein the metal layer is configured to serve as a first pad;

a second electrode on the second surface of the GaN layer; and

a second pad on the second electrode.

2. The light emitting device according to claim 1, wherein the first electrode comprises at least one material selected from a group including Al, Ti/Al, Cr/Au, and Ti/Au.

3. The light emitting device according to claim 1, the second electrode comprises a transparent contact.

4. The light emitting device according to claim 3, the transparent contact comprises a transparent conductive oxide (TCO) layer.

5. The light emitting device according to claim 3, wherein the transparent contact comprises indium-tin-oxide.

6. The light emitting device according to claim 1, wherein the second electrode comprises at least one material selected from a group including Ni/Au, Pd/Au, Pd/Ni and Pt.

7. The light emitting device according to claim 1, wherein the active layer comprises AlInGaN.

8. The light emitting device according to claim 1, wherein the active layer comprises at least one of a quantum well layer and a double hetero structure.

9. The light emitting device according to claim 1, wherein the thickness of the second pad is about 0.5 μ

m or higher.

10. The light emitting device according to claim 1, further comprising a cladding layer between the p-type layer and the active layer.

11. The light emitting device according to claim 10, wherein the cladding layer comprises AlGaN.

12. The light emitting device according to claim 1, wherein the conductive structure is located at the bottom of the device.

13. The light emitting device according to claim 1, wherein the metal layer is located in a lower portion of the conductive structure.