Power device edge termination having a resistor with one end biased to source voltage
First Claim
Patent Images
1. A field effect transistor comprising:
- a source electrode for receiving an externally-provided source voltage;
an active region;
a termination region surrounding the active region; and
a resistive element coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and the resistive element is configured to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region,wherein during operation, one end of the resistive element is biased to the source voltage.
6 Assignments
0 Petitions
Accused Products
Abstract
A field effect transistor (FET) includes a source electrode for receiving an externally-provided source voltage. The FET further includes an active region and a termination region surrounding the active region. A resistive element is coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and the resistive element is configured to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region. During operation, one end of the resistive element is biased to the source voltage.
-
Citations
19 Claims
-
1. A field effect transistor comprising:
-
a source electrode for receiving an externally-provided source voltage; an active region; a termination region surrounding the active region; and a resistive element coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and the resistive element is configured to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region, wherein during operation, one end of the resistive element is biased to the source voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
-
13. A field effect transistor comprising:
-
a source electrode for receiving an externally-provided source voltage; an active region; a termination region surrounding the active region; a resistive means coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and when the avalanche current reaches a predetermined level the resistive means operates to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region, wherein during operation, one end of the resistive element is biased to the source voltage. - View Dependent Claims (14, 15, 16, 17, 18, 19)
-
Specification