Monolithic MEMS and integrated circuit device having a barrier and method of fabricating the same
First Claim
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1. An integrated circuit device, comprising:
- a semiconductor die, the semiconductor die including a single semiconductor substrate;
driving/sensing circuitry disposed along a peripheral region of the semiconductor die;
a MEMS device disposed within a central region of the semiconductor die; and
a barrier disposed on the single semiconductor substrate between the driving/sensing circuitry and the MEMS device, to surround the MEMS device,wherein the MEMS device senses or produces a pressure differential and is unsealed by the barrier.
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Abstract
An integrated circuit device includes a semiconductor die, the semiconductor die including a semiconductor substrate, driving/control circuitry disposed along a peripheral region of the semiconductor die, a MEMS device disposed within a central region of the semiconductor die, and a barrier disposed between the driving/control circuitry and the MEMS device.
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Citations
52 Claims
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1. An integrated circuit device, comprising:
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a semiconductor die, the semiconductor die including a single semiconductor substrate; driving/sensing circuitry disposed along a peripheral region of the semiconductor die; a MEMS device disposed within a central region of the semiconductor die; and a barrier disposed on the single semiconductor substrate between the driving/sensing circuitry and the MEMS device, to surround the MEMS device, wherein the MEMS device senses or produces a pressure differential and is unsealed by the barrier. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 47, 48, 51, 52)
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23. A method of fabricating an integrated circuit device, comprising:
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forming driving/sensing circuitry disposed along a peripheral region of a semiconductor die, the semiconductor die including a single semiconductor substrate; forming a MEMS device within a central region of the semiconductor die; and forming a barrier on the single semiconductor substrate between the driving/sensing circuitry and the MEMS device, to surround the MEMS device, the barrier electrically connected to the semiconductor substrate by a diffusion region within the semiconductor substrate, the diffusion region surrounding the MEMS device, wherein the MEMS device senses or produces a pressure differential and is unsealed by the barrier. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 49, 50)
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Specification