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Monolithic MEMS and integrated circuit device having a barrier and method of fabricating the same

  • US 7,863,714 B2
  • Filed: 06/05/2006
  • Issued: 01/04/2011
  • Est. Priority Date: 06/05/2006
  • Status: Active Grant
First Claim
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1. An integrated circuit device, comprising:

  • a semiconductor die, the semiconductor die including a single semiconductor substrate;

    driving/sensing circuitry disposed along a peripheral region of the semiconductor die;

    a MEMS device disposed within a central region of the semiconductor die; and

    a barrier disposed on the single semiconductor substrate between the driving/sensing circuitry and the MEMS device, to surround the MEMS device,wherein the MEMS device senses or produces a pressure differential and is unsealed by the barrier.

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