System and method for measuring a capacitance by transferring charge from a fixed source

• US 7,863,909 B2
• Filed: 03/04/2008
• Issued: 01/04/2011
• Est. Priority Date: 03/04/2008
• Status: Expired due to Fees

• Current Assignee: Synaptics Incorporated
• Original Assignee: Synaptics Incorporated
• Inventors: Keith, Colby
• Primary Examiner(s): NATALINI, JEFF WILLIAM
• Application Number:
  US12/042,217
• Publication Number:
  US 20090224776A1
• Time in Patent Office: 1,036 Days
• Field of Search: 324/662, 324/663, 324/678
• US Class Current: 324/678
• CPC Class Codes: H03K 17/962 Capacitive touch switches
• CPC Class Codes: H03K 2217/960725 Charge-transfer

Abstract

A touch sensor device and method is provided that determines measurable capacitances for object detection. The systems and methods measure capacitance by controllably transferring charge from a storage capacitor, and determining the measurable capacitance by measuring the residual voltage remaining on the storage capacitor after the transfer. The systems and methods thus provide an accurate determination of the measurable capacitance that can be used for object proximity sensing.

Claims

1. A capacitive proximity sensor device, the capacitive proximity sensor device comprising:

a sensing electrode, the sensing electrode having an associated measurable capacitance that varies with object proximity;

a storage capacitor;

a charging circuit, the charging circuit configured to selectively couple the storage capacitor and to selectively charge the storage capacitor to a predetermined level, thereby storing a set amount of charge on the storage capacitor;

a charge transfer circuit, the charge transfer circuit configured to controllably transfer charge from the storage capacitor to the sensing electrode while measuring voltage on the sensing electrode and, where the charge transfer circuit is configured to cease controllably transferring charge responsive to the measured voltage on the sensing electrode reaching a defined level, with a residual voltage remaining on the storage capacitor after the transfer; and

a measurement circuit coupled to the storage capacitor, the measurement circuit configured to measure the residual voltage remaining on the storage capacitor to determine the measurable capacitance associated with the sensing electrode from the measured residual voltage.

2. The proximity sensor device of claim 1 wherein the charge transfer circuit includes a transistor coupled between the sensing electrode and the storage capacitor, the charge transfer circuit configured to bias the transistor to controllably transfer charge from the storage capacitor to the sensing electrode.

3. The proximity sensor device of claim 2 wherein the transistor comprises a field effect transistor, and wherein the charge transfer circuit is configured to bias the field effect transistor in a saturation region to controllably transfer charge from the storage capacitor to the sensing electrode.

4. The proximity sensor device of claim 3 wherein the charge transfer circuit includes an comparator coupled to a gate of the field-effect transistor, the comparator configured to measure voltage on the sensing electrode by comparing the voltage on the sensing electrode with a reference voltage, the comparator configured to operate the transistor in the saturation mode when the voltage on the sensing electrode is less than the reference voltage.

5. The proximity sensor device of claim 1 wherein the measurement circuit is configured to determine the measurable capacitance associated with the sensing electrode from the measured residual voltage by comparing the measured residual voltage to a threshold value.

6. The proximity sensor device of claim 1 wherein the measurement circuit is configured to determine the measurable capacitance associated with the sensing electrode from the measured residual voltage by filtering the measured residual voltage, and performing an analog-to-digital conversion of the filtered residual voltage.

7. The proximity sensor device of claim 1 wherein the measurement circuit is configured to determine the measurable capacitance associated with the sensing electrode from the measured residual voltage by filtering multiple measured residual voltages generated by repeated transfers of charge from the storage capacitor to the sensing electrode, repeatedly sampling the filtered multiple measured residual voltages, and repeatedly performing an analog-to-digital conversion of the sampled filtered multiple measured residual voltages.

8. The proximity sensor device of claim 1 further comprising:

a second storage capacitor;

a second charging circuit, the second charging circuit configured to selectively couple the second storage capacitor and to selectively charge the second storage capacitor to a second predetermined level, thereby storing a set amount of charge on the second storage capacitor;

a second charge transfer circuit, the charge transfer circuit configured to controllably transfer charge from the second storage capacitor to the sensing electrode while measuring voltage on the sensing electrode and, where the second charge transfer circuit is configured to cease controllably transferring charge responsive to the measured voltage on the sensing electrode reaching a second defined level, with a second residual voltage remaining on the second storage capacitor after the transfer; and

and wherein the measurement circuit is further coupled to the second storage capacitor, the measurement circuit configured to measure the second residual voltage remaining on the second storage capacitor, and wherein the measurement circuit is further configured to determine the measurable capacitance associated with the sensing electrode from the measured second residual voltage.

9. The proximity sensor device of claim 8 wherein the second storage capacitor is coupled to a first switch and a second switch, the first switch configured to switch a first electrode of the second storage capacitor between ground and the measurement circuit, the second switch configured to switch a second electrode of the second storage capacitor to a reference voltage.

10. The proximity sensor device of claim 9 wherein the measurement circuit includes a multiplexer, and wherein the storage capacitor is coupled to a first input of the multiplexer, and wherein the second storage capacitor is coupled to a second input of the multiplexer.

11. The proximity sensor device of claim 8 wherein the measurement circuit includes a mixer, and wherein the mixer is coupled to the storage capacitor and the second storage capacitor, and is configured to selectively combine the measured residual voltage and the second measured residual voltage.

12. A capacitive proximity sensor device, the capacitive proximity sensor device comprising:

a sensing electrode, the sensing electrode having an associated measurable capacitance that varies with object proximity;

a storage capacitor;

a charging circuit, the charging circuit configured to selectively couple the storage capacitor and to selectively charge the storage capacitor to a predetermined level, thereby storing a set amount of charge on the storage capacitor;

a charge transfer circuit, the charge transfer circuit including a field effect transistor coupled between the sensing electrode and the storage capacitor, the charge transfer circuit further including a comparator coupled to the gate of the field effect transistor, the comparator configured to measure voltage on the sensing electrode by comparing the voltage on the sensing electrode with a reference voltage, the comparator configured to operate the field effect transistor in a saturation mode when the voltage on the sensing electrode is less than the reference voltage such that the charge transfer circuit controllably transfers charge from the storage capacitor to the sensing electrode while the voltage on the sensing electrode is less than the reference voltage, and wherein the comparator is configured to turn off the field effect transistor when the voltage on the sensing electrode is greater than the reference voltage such that the charge transfer circuit ceases controllably transferring charge responsive to the voltage on the sensing electrode reaching the reference voltage, with a residual voltage remaining on the storage capacitor after the transfer; and

a measurement circuit coupled to the storage capacitor, the measurement circuit configured to measure the residual voltage remaining on the storage capacitor to determine the measurable capacitance associated with the sensing electrode from the measured residual voltage.

13. A method for sensing a proximate object, the method comprising the steps of:

charging a storage capacitor to a predetermined level, thereby storing a set amount of charge on the storage capacitor;

controllably transferring charge from the storage capacitor to a sensing electrode having an associated measurable capacitance that varies with object proximity while measuring voltage on the sensing electrode, until the measured voltage on the sensing electrode reaches a defined level, with a residual voltage remaining on the storage capacitor after the transferring; and

measuring the residual voltage remaining on the storage capacitor; and

determining the measurable capacitance associated with the sensing electrode from the measured residual voltage.

14. The method of claim 13 wherein the step of controllably transferring charge from the storage capacitor to a sensing electrode comprises transferring charge through a transistor biased to controllably transfer charge from the storage capacitor to the sensing electrode.

15. The method of claim 14 wherein the transistor comprises a field-effect transistor, and wherein the field-effect transistor is biased in a saturation region to controllably transfer charge from the storage capacitor to the sensing electrode.

16. The method of claim 15 wherein the step of controllably transferring charge from the storage capacitor to a sensing electrode while measuring voltage on the sensing electrode comprises:

comparing the voltage on the sensing electrode with a reference voltage and operating the field-effect transistor in the saturation region when the voltage on the sensing electrode is less than the reference voltage.

17. The method of claim 13 wherein the step of determining a measurable capacitance associated with the sensing electrode from the measured residual voltage comprises:

comparing the measured residual voltage to a threshold value.

18. The method of claim 13 wherein the step of determining a measurable capacitance associated with the sensing electrode from the measured residual voltage comprises:

filtering the measured residual voltage, and performing an analog-to-digital conversion of the filtered residual voltage.

19. The method of claim 13 wherein the step of determining a measurable capacitance associated with the sensing electrode from the measured residual voltage comprises

filtering measured residual voltages generated by repeated transfers of charge from the storage capacitor to the sensing electrode and repeated measuring of residual voltages remaining on the storage capacitor;

repeatedly sampling the filtered measured residual voltages; and

repeatedly performing an analog-to-digital conversion of the sampled filtered multiple measured residual voltages.

20. A capacitive proximity sensor device, the capacitive proximity sensor device comprising:

a plurality of sensing electrodes, the plurality of sensing electrodes each having an associated measurable capacitance that varies with object proximity;

a plurality of storage capacitors;

a charging circuit, the charging circuit configured to selectively couple the storage capacitor and to selectively charge the plurality of storage capacitors to a predetermined level, thereby storing a set amount of charge on each of the plurality of storage capacitors;

a charge transfer circuit, the charge transfer circuit configured to controllably transfer charge from each of the plurality of storage capacitors to an associated sensing electrode in the plurality of sensing electrodes while measuring voltage on the associated sensing electrode and, where the charge transfer circuit is configured to cease controllably transferring charge responsive to the measured voltage on the associated sensing electrode reaching a defined level, with a residual voltage remaining on each storage capacitor after the transfer; and

a measurement circuit coupled to the plurality of storage capacitors, the measurement circuit configured to measure the residual voltages remaining on each of the plurality of storage capacitors to determine the measurable capacitance associated with each of the plurality of sensing electrodes from the measured residual voltages, and wherein the measured residual voltages are used by the sensor device to determine positional information regarding an object proximate the plurality of sensing electrodes.

21. The proximity sensor device of claim 20 wherein the charge transfer circuit includes a plurality of transistors, each of the plurality of transistors coupled between a storage capacitor in the plurality of storage capacitors and its associated sensing electrode, the charge transfer circuit configured to bias each transistor to controllably transfer charge from each storage capacitor to its associated sensing electrode.

22. The proximity sensor device of claim 21 wherein the plurality of transistors comprise field effect transistors, and wherein the charge transfer circuit is configured to bias the field effect transistors in a saturation region to controllably transfer charge from the each storage capacitor to its associated sensing electrode.