System and method for increasing radio frequency (RF) microwave inductor-capacitor (LC) oscillator frequency tuning range

• US 7,863,994 B2
• Filed: 01/24/2008
• Issued: 01/04/2011
• Est. Priority Date: 02/19/2004
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Barton, Nathan, Hung, Chih-Ming, Leipold, Dirk
• Primary Examiner(s): KINKEAD, ARNOLD M
• Application Number:
  US12/018,856
• Publication Number:
  US 20080129390A1
• Time in Patent Office: 1,076 Days
• Field of Search: 331/167, 331/117.FE, 331/117.R, 331/179, 331/177.V
• US Class Current: 331/167
• CPC Class Codes: H03B 5/1209 the amplifier having two current paths operating in a differential manner and a current source or degeneration circuit in common to both paths, e.g. a long-tailed pair. H03B5/1215 takes precedence
• CPC Class Codes: H03B 5/1256 the means comprising a variable inductance
• CPC Class Codes: H03B 5/1287 the parameter being a quality factor, e.g. Q factor of the frequency determining element
• CPC Class Codes: H03B 5/1296 the feedback circuit comprising a transformer

Abstract

System and method for increasing the frequency tuning range of a RF/microwave LC oscillator. A preferred embodiment comprises a voltage controlled oscillator (VCO) configured to generate an output signal at a frequency that is dependent upon a magnitude of an input voltage level and an effective inductance of an inductive load and a variable inductor coupled to the VCO. The variable inductor comprises a primary inductor coupled to the VCO to produce a magnetic field based upon a current flowing through the primary inductor and a secondary inductor magnetically coupled to the primary inductor, the secondary inductor to affect the magnitude of the effective inductance of the primary inductor.

Claims

1. A voltage controlled oscillator fabricated on an integrated circuit, the voltage controlled oscillator comprising:

a semiconductor substrate;

a voltage controlled oscillator disposed on the semiconductor substrate, the voltage controlled oscillator core comprising an active element, a first terminal and a second terminal;

a primary inductor disposed on the semiconductor substrate, the primary inductor comprising a first terminal and a second terminal, wherein the first terminal of the primary inductor is coupled to the first terminal of the voltage controlled oscillator core, and wherein the second terminal of the primary inductor is coupled to the second terminal of the voltage controlled oscillator core;

a secondary inductor disposed on the semiconductor substrate, the secondary inductor comprising a first terminal and a second terminal, wherein the secondary inductor is magnetically coupled to the primary inductor to affect a magnitude of an effective inductance of the primary inductor

a variable impedance element coupled to the first and second terminals of the secondary inductor;

the active element comprises a first transistor and a second transistor, each transistor comprising a first terminal, a second terminal, and a control terminal, wherein the second terminal of the first transistor is coupled to the first terminal of the voltage controlled oscillator core, the second terminal of the second transistor is coupled to the second terminal of the voltage controlled oscillator core, the control terminal of the first transistor is coupled to the second terminal of the voltage controlled oscillator core and the control terminal of the second transistors coupled to the first terminal of the voltage controlled oscillator core;

the primary and secondary inductors comprise metal spiral inductors fabricated on the semiconductor substrate; and

the variable impedance element comprises a transistor, the transistor comprising a first terminal, a second terminal, and a control terminal, the control terminal coupled to a control voltage, wherein the control voltage controls the effective inductance the first and second terminals of the primary inductor.

2. The voltage controlled oscillator of claim 1, wherein each active element transistor comprises a bipolar transistor, wherein the first terminal is an emitter, the second terminal is a collector and the control terminal is a base.

3. The voltage controlled oscillator of claim 1, wherein each active element transistor comprises a MOS transistor, wherein the first terminal is source, the second terminal is a drain and the third terminal is a gate.

4. The voltage controlled oscillator of claim 1, wherein the variable impedance transistor comprises a bipolar transistor wherein the first terminal is an emitter, the second terminal is a collector and the control terminal is a base.

5. The voltage controlled oscillator of claim 1, wherein the variable impedance transistor comprises a MOS differential transistor, wherein the first terminal is source, the second is a drain and the third terminal is a gate.

6. A voltage controlled oscillator fabricated on an integrated circuit, the voltage controlled oscillator comprising:

a semiconductor substrate;

a voltage controlled oscillator disposed on the semiconductor substrate, the voltage controlled oscillator core comprising an active element, a first terminal and a second terminal;

a primary inductor disposed on the semiconductor substrate, the primary inductor comprising a first terminal and a second terminal, wherein the first terminal of the primary inductor is coupled to the first terminal of the voltage controlled oscillator core, and wherein the second terminal of the primary inductor is coupled to the second terminal of the voltage controlled oscillator core;

a secondary inductor disposed on the semiconductor substrate, the secondary inductor comprising a first terminal and a second terminal, wherein the secondary inductor is magnetically coupled to the primary inductor to affect a magnitude of an effective inductance of the primary inductor;

a variable impedance element coupled to the first and second terminals of the secondary inductor;

wherein the secondary inductor comprises a plurality of secondary inductors, and wherein the first and second terminals of each secondary inductor is coupled to a variable impedance element.