Display device and method with metal substrate including a pixel array and storage capacitor in combination in which plural storage lines connected thereto are connected to the metal substrate

• US 7,864,286 B2
• Filed: 12/31/2007
• Issued: 01/04/2011
• Est. Priority Date: 03/13/2007
• Status: Active Grant

• Current Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Original Assignee: LG Display Co., Ltd.
• Inventors: Kim, Sung Hwan, Kim, Sang Soo, Lee, Kyoung Mook
• Primary Examiner(s): HEYMAN, JOHN S
• Application Number:
  US11/967,995
• Publication Number:
  US 20080225215A1
• Time in Patent Office: 1,100 Days
• Field of Search: 349158-160
• US Class Current: 349/158
• CPC Class Codes: G02F 1/13606 having means for reducing parasitic capacitance
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode

Abstract

A display device and a method of manufacturing the same is disclosed, to prevent a parasitic capacitance caused by a metal substrate. The display device comprises a metal substrate including a pixel array provided with a plurality of storage lines to supply a storage voltage, and a supplying line connected to the storage lines; and a voltage source, connected to the supplying line, which generates the storage voltage, wherein the metal substrate is connected to any one of an output terminal of the voltage source, the supplying line and the storage lines.

Claims

1. A display device comprising:

a metal substrate including a pixel array provided with a plurality of storage lines to supply a storage voltage, and a supplying line connected to the storage lines; and

a storage voltage source, connected to the supplying line, that generates the storage voltage,

wherein the metal substrate is connected to any one of an output terminal of the storage voltage source, the supplying line and the storage lines,

wherein the metal substrate is directly connected to the storage lines at each pixel in the pixel array, or the metal substrate is connected to the storage lines via the supplying line, or metal substrate is connected to the storage lines via the supplying line, connected to the output terminal of the storage voltage source, and a conductive cable, connected to the metal substrate and the output terminal of the voltage source,

wherein each pixel in the pixel array includes a storage capacitor connected to the one of the plurality of storage lines and the metal substrate is used as an electrode of the storage capacitor.

2. The display device of claim 1, wherein the pixel array comprises:

a gate line separated from the storage line, and a gate electrode of thin film transistor connected to the gate line;

a semiconductor pattern overlapping with the gate electrode in the area of thin film transistor;

a data line crossing the gate line on the semiconductor pattern, a source electrode of thin film transistor connected to the data line, and a drain electrode of thin film transistor; and

a pixel electrode overlapping with the storage line and connected to the drain electrode of thin film transistor.

3. A display device comprising:

a metal substrate including a pixel array provided with a plurality of storage lines to supply a storage voltage;

a first insulation film between the metal substrate and the storage lines; and

a first contact hole passing through the first insulation film at each pixel in the pixel array, to expose the metal substrate;

wherein each of the storage lines is directly connected to the metal substrate through the first contact hole of the each pixel, and disposed on the first insulation film, and

wherein the each pixel includes a storage capacitor connected to the storage line and the metal substrate is used as an electrode of the storage capacitor.

5. The display device of claims 3, further comprising:

a gate line separated from the storage line and formed on the first insulation film, and a gate electrode of thin film transistor connected to the gate line;

a second insulation film to cover the gate line, the gate electrode and the storage line;

a semiconductor pattern on the second insulation film in the area of thin film transistor;

a data line crossing the gate line on the semiconductor pattern, a source electrode of thin film transistor connected to the data line, and a drain electrode of thin film transistor;

a third insulation film to cover the data line and the thin film transistor;

a second contact hole passing through the third insulation film, to expose the drain electrode of thin film transistor; and

a pixel electrode formed on the third insulation film, overlapped with the storage line and connected to the drain electrode of thin film transistor by the second contact hole.

4. A display device comprising:

a metal substrate including a pixel array;

a first insulation film on a pixel array area of metal substrate to exposed an edge of the metal substrate;

a supplying line supplied with a storage voltage, formed in the edge of metal substrate outside the pixel array area, and directly connected to the edge of the metal substrate; and

a plurality of storage lines, connected to the supplying line and formed on the first insulation film, which supply the storage voltage to the pixel array area,

wherein the metal substrate is connected to the storage lines via the supplying line, and

wherein each pixel in the pixel array includes a storage capacitor connected to the one of the plurality of storage lines and the metal substrate is used as an electrode of the storage capacitor.

6. The display device of claim 4, further comprising:

a gate line separated from the storage line and formed on the first insulation film, and a gate electrode of thin film transistor connected to the gate line;

a second insulation film to cover the gate line, the gate electrode and the storage line;

a semiconductor pattern on the second insulation film in the area of thin film transistor;

a data line crossing the gate line on the semiconductor pattern, a source electrode of thin film transistor connected to the data line, and a drain electrode of thin film transistor;

a third insulation film to cover the data line and the thin film transistor;

a second contact hole passing through the third insulation film, to expose the drain electrode of thin film transistor; and

a pixel electrode formed on the third insulation film, overlapped with the storage line and connected to the drain electrode of thin film transistor by the second contact hole.

7. A method of manufacturing a display device comprising:

forming a pixel array including a supplying line to supply a storage voltage and a plurality of storage lines connected to the supplying line on a metal substrate; and

connecting an output terminal of storage voltage source for generating the storage voltage to the supplying line,

wherein the metal substrate is connected to any one of the supplying line, the storage lines, and the output terminal of storage voltage source,

wherein the metal substrate is directly connected to the storage lines at each pixel in the pixel array, or the metal substrate is connected to the storage lines via the supplying line, or metal substrate is connected to the storage lines via the supplying line, connected to the output terminal of the storage voltage source, and a conductive cable, connected to the metal substrate and the output terminal of the voltage source,

wherein each pixel in the pixel array includes a storage capacitor connected to the one of the plurality of storage lines and the metal substrate is used as an electrode of the storage capacitor.

8. The method of claim 7, wherein forming the pixel array comprises:

forming a gate line separated from the storage line, and a gate electrode of thin film transistor connected to the gate line, as well as the supplying line and storage lines, at the same time;

forming a semiconductor pattern overlapping with the gate electrode in the area of thin film transistor, a data line crossing the gate line and formed on the semiconductor pattern, a source electrode of thin film transistor connected to the data line, and a drain electrode of thin film transistor; and

forming a pixel electrode overlapping with the storage line and connected to the drain electrode of thin film transistor.

9. A method of manufacturing a display device comprising:

providing a metal substrate for forming a pixel array;

forming a first insulation film on the metal substrate, the first insulation film including a first contact hole passing through the first insulation film at each pixel in the pixel array, to expose the metal substrate; and

forming a pixel array including a plurality of storage lines on the first insulation film;

wherein each of the storage lines is directly connected to the metal substrate through the first contact hole of the each pixel, and disposed on the first insulation film, and

wherein the each pixel includes a storage capacitor connected to the storage line and the metal substrate is used as an electrode of the storage capacitor.

10. The method of claim 9, wherein forming the pixel array comprises forming a gate line separated from the storage line, and a gate electrode of thin film transistor connected to the gate line.

11. The method of claim 10, wherein forming the pixel array further comprises:

forming a second insulation film to cover the gate line, the gate electrode and the storage line;

forming a semiconductor pattern on the second insulation film in the area of thin film transistor, a data line crossing the gate line on the semiconductor pattern, a source electrode of thin film transistor connected to the data line, and a drain electrode of thin film transistor;

forming a third insulation film including a second contact hole to expose the drain electrode of thin film transistor; and

forming a pixel electrode on the third insulation film, overlapped with the storage line and connected to the drain electrode of thin film transistor by the second contact hole.

12. A method of manufacturing a display device comprising:

providing a metal substrate for forming a pixel array;

forming a first insulation film on the pixel array area of metal substrate to expose an edge of the metal substrate; and

forming a supplying line, supplied with a storage voltage, on the edge of metal substrate outside the pixel array area, and a plurality of storage lines, connected to the supplying line and formed on the first insulation film, for supplying the storage voltage to the pixel array area,

wherein the supplying line is directly connected to the edge of the metal substrate,

wherein the metal substrate is connected to the storage lines via the supplying line, and

wherein each pixel in the pixel array includes a storage capacitor connected to the one of the plurality of storage lines and the metal substrate is used as an electrode of the storage capacitor.

13. The method of claim 12, wherein forming the storage line comprises forming a gate line separated from the storage line, and a gate electrode of thin film transistor connected to the gate line.

14. The method of claim 13, further comprising:

forming a second insulation film to cover the gate line, the gate electrode and the storage line;

forming a semiconductor pattern on the second insulation film in the area of thin film transistor, a data line crossing the gate line on the semiconductor pattern, a source electrode of thin film transistor connected to the data line, and a drain electrode of thin film transistor;

forming a third insulation film including a second contact hole to expose the drain electrode of thin film transistor; and

forming a pixel electrode on the third insulation film, overlapped with the storage line and connected to the drain electrode of thin film transistor by the second contact hole.