In situ monitoring of wafer charge distribution in plasma processing

• US 7,864,502 B2
• Filed: 05/15/2007
• Issued: 01/04/2011
• Est. Priority Date: 05/15/2007
• Status: Expired due to Fees

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Reath, Mark L, Wong, Justin, Boyd, Kevin M, Shiffler, Barbara L, Gallo, James A, Higgins, Edward P
• Primary Examiner(s): Jackson; Stephen W
• Assistant Examiner(s): KITOV, ZEEV V
• Application Number:
  US11/748,560
• Publication Number:
  US 20080285202A1
• Time in Patent Office: 1,330 Days
• Field of Search: 361/234, 361/230, 438/5
• US Class Current: 361/234
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 21/683 for supporting or gripping for conveying H01L21/677, for positioning, orientation or alignment H01L21/68
• CPC Class Codes: Y02P 80/30 Reducing waste in manufacturing processes; Calculations of released waste quantities

Abstract

A processing system and method. The processing system includes a processing tool, an electrostatic chuck (ESC) arranged within the processing tool, and a system that at least one of detects at least one of an ESC bias spike and an ESC current spike of the ESC and determines when an ESC bias voltage is zero or exceeds a threshold value. The method includes at least one of detecting at least one of an ESC bias spike and an ESC current spike of the ESC, and determining when an ESC bias voltage is zero or exceeds a threshold value. The system and method can be used in real time ESC and plasma processing diagnostics to minimize yield loss and wafer scrap.

Claims

1. A processing system, comprising:

a processing tool;

an electrostatic chuck (ESC) arranged within the processing tool; and

a system that;

detects an ESC bias spike and an ESC current spike of the ESC; and

determines when an ESC bias voltage is zero or exceeds a threshold value, wherein

the processing tool comprises a plasma processing apparatus,

the processing system is a wafer processing system,

the processing system;

measures at least one of ESC voltage, ESC current, and ESC bias of a wafer,

is structured and arranged to detect the ESC bias spike and the ESC current spike during processing, and compares at least one of;

the ESC bias spike and/or the ESC current spike to predetermined values or ranges and determines when a statistical process control violation has occurred, and

the ESC bias voltage to zero or the threshold value and determines when a statistical process control violation has occurred,

evaluates at least one of;

the ESC bias spike, the ESC bias voltage and the ESC current spike, and determines when a statistical process control violation has occurred, and diverts production away from the processing tool when the statistical process control violation has occurred and identifies the processing tool as requiring inspection, maintenance, and/or repair.

2. A method of processing wafers in a processing tool comprising an electrostatic chuck (ESC), the method comprising:

at least one of;

detecting an ESC bias spike and an ESC current spike of the ESC; and

determining when an ESC bias voltage is zero or exceeds a threshold value;

comparing the ESC bias voltage to zero or the threshold value;

evaluating at least one of ESC bias voltage, the ESC bias spike and the ESC current spike;

determining when a statistical process control violation has occurred;

diverting production away from the processing tool when the statistical process control violation has occurred; and

identifying the processing tool as requiring inspection, maintenance, and/or repair.

3. A processing system, comprising:

a processing tool;

an electrostatic chuck (ESC) arranged within the processing tool; and

a system that at least one of;

detects an ESC bias spike and/or an ESC current spike of the ESC; and

determines when an ESC bias voltage is zero or exceeds a threshold value,

wherein the system compares the ESC bias spike and/or the ESC current spike to predetermined values or ranges and determines when a statistical process control violation has occurred and diverts production away from the processing tool when the statistical process control violation has occurred.

4. The system of claim 3, wherein the processing tool comprises a plasma processing apparatus.

5. The system of claim 3, wherein the processing system is a wafer processing system.

6. The system of claim 3, wherein the system measures at least one of ESC voltage, ESC current, and ESC bias of a wafer.

7. The system of claim 3, wherein the system measures at least one of ESC voltage, ESC current, and ESC bias of the ESC.

8. The system of claim 3, wherein the system is structured and arranged to detect the ESC bias spike and/or the ESC current spike during processing.

9. The system of claim 3, wherein the system compares the ESC bias voltage to zero or the threshold value and determines when the statistical process control violation has occurred.

10. The system of claim 3, wherein when the system evaluates the ESC bias spike and/or the ESC current spike and determines when the statistical process control violation has occurred, the system identifies the processing tool as requiring inspection, maintenance, and/or repair.

11. The system of claim 3, wherein when the system evaluates the ESC bias voltage and determines when the statistical process control violation has occurred, the system identifies the processing tool as requiring inspection, maintenance, and/or repair.

12. A processing system, comprising:

a processing tool;

an electrostatic chuck (ESC) arranged within the processing tool; and

a system that determines when an ESC bias voltage of the ESC and/or of a wafer arranged on the ESC is zero or exceeds a threshold value,

wherein the system compares the ESC bias spike and/or the ESC current spike to predetermined values or ranges and determines when a statistical process control violation has occurred.

13. The system of claim 12, wherein the processing tool comprises a plasma processing apparatus.

14. The system of claim 12, wherein the processing system is a wafer processing system.

15. The system of claim 12, wherein the system measures at least one of ESC voltage, ESC current, and ESC bias of the wafer.

16. The system of claim 12, wherein the system measures at least one of ESC voltage, ESC current, and ESC bias of the ESC.

17. The system of claim 12, wherein the system is structured and arranged to detect an ESC bias spike and/or an ESC current spike.

18. The system of claim 12, wherein the system compares the ESC bias voltage to zero or the threshold value and determines when the statistical process control violation has occurred.

19. The system of claim 12, wherein when the system detects an ESC bias spike and/or an ESC current spike, determines when the statistical process control violation has occurred, the system diverts production away from the processing tool when the statistical process control violation has occurred.

20. The system of claim 12, wherein system evaluates the ESC bias voltage, determines when the statistical process control violation has occurred, the system diverts production away from the processing tool when the statistical process control violation has occurred.

21. The system of claim 12, wherein when the system evaluates an ESC bias spike and/or an ESC current spike, determines when the statistical process control violation has occurred, the system identifies the processing tool as requiring inspection, maintenance, and/or repair.

22. The system of claim 12, wherein when the system evaluates the ESC bias voltage, determines when the statistical process control violation has occurred, the system identifies the processing tool as requiring inspection, maintenance, and/or repair.

23. A processing system, comprising:

a processing tool;

an electrostatic chuck (ESC) arranged within the processing tool; and

a system that

detects at least one of an ESC current spike and an ESC bias spike of at least one of a wafer and the ESC, and

determines when an ESC bias voltage is zero or exceeds a threshold value.

24. A method of processing wafers in a processing tool comprising an electrostatic chuck (ESC), the method comprising:

at least one of;

detecting an ESC bias spike and/or an ESC current spike of the ESC; and

determining when an ESC bias voltage is zero or exceeds a threshold value; and

evaluating the ESC bias voltage;

determining when a statistical process control violation has occurred; and

diverting production away from the processing tool when the statistical process control violation has occurred.

25. The method of claim 24, further comprising:

comparing the ESC bias voltage to zero or the threshold value; and

determining when a statistical process control violation has occurred.

26. The method of claim 24, further comprising:

evaluating the ESC bias spike and/or the ESC current spike;

determining when the statistical process control violation has occurred; and

diverting production away from the processing tool when the statistical process control violation has occurred.

27. The method of claim 24, further comprising:

at least one of;

evaluating the ESC bias spike and/or the ESC current spike; and

evaluating the ESC bias voltage;

determining when the statistical process control violation has occurred; and

identifying the processing tool as requiring inspection, maintenance, and/or repair.