Heat treating apparatus

• US 7,865,070 B2
• Filed: 03/22/2005
• Issued: 01/04/2011
• Est. Priority Date: 04/21/2004
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp., Sanken Electric Company Limited
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Nakashima, Sadao, Nakamura, Naoto, Nakamura, Iwao
• Primary Examiner(s): Campbell; Thor S
• Application Number:
  US11/578,963
• Publication Number:
  US 20080267598A1
• Time in Patent Office: 2,114 Days
• Field of Search: 392/416, 392/418, 392/391
• US Class Current: 392/416
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/67306 characterized by a material, a roughness, a coating or the like
• CPC Class Codes: H01L 21/67309 characterized by the substrate support

Abstract

To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing.

The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 μm to 1,000 μm. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.

Claims

1. A heat treating apparatus comprising a processing chamber for heat treating a substrate, and a support tool for supporting the substrate in the processing chamber;

and the support tool having a support plate which contacts the substrate, and a main body for supporting the support plate, wherein the diameter of the support plate is 63 to 73 percent of the diameter of the substrate and the surface roughness Ra of at least a portion of the support plate which contacts the substrate is set from 1 μ

m to 1,000 μ

m.

2. The heat treating apparatus according to claim 1, wherein the surface roughness Ra of at least the portion of the support plate which contacts the substrate is set from 1.5 μ

m to 1,000 μ

m.

3. The heat treating apparatus according to claim 1, wherein the surface roughness Ra of at least the portion of the support plate which contacts the substrate is set from 2 μ

m to 1,000 μ

m.

4. The heat treating apparatus according to claim 1, wherein the diameter of the substrate is 300 mm, and the diameter of the support plate is 190 mm to 220 mm.

5. The heat treating apparatus according to claim 1, wherein the hardness of at least the portion of the support plate which contacts the substrate is the same as or greater than the hardness of the substrate.

6. The heat treating apparatus according to claim 1, wherein the main body is made from silicon carbide, and the support plate is made from silicon or silicon carbide.

7. The heat treating apparatus according to claim 1, wherein a layer of silicon oxide, silicon carbide, or silicon nitride is formed on the surface of the support plate.

8. The heat treating apparatus according to claim 1, wherein the heat treatment is performed at a temperature of 1300°

or higher.

9. The heat treating apparatus according to claim 1, wherein at least one through hole is formed in the support plate.

10. A method for manufacturing a substrate comprising the steps of:

supporting a substrate on a support plate in which the diameter is 63 to 73 percent of the substrate diameter, and the surface roughness Ra of at least the portion which contacts the substrate is 1 μ

m to 1,000 μ

m;

loading the substrate supported on the support plate into a processing chamber;

heat treating the substrate supported on the support plate in the processing chamber; and

unloading the substrate from the processing chamber after the heat treating.

11. A support tool for supporting a substrate when the substrate is heat treated, wherein the support tool has a support plate which contacts the substrate, and a main body for supporting the support plate, the diameter of the support plate is 63 to 73 percent of the diameter of the substrate and the surface roughness Ra of at least a portion of the support plate which contacts the substrate is set from 1 μ

m to 1,000 μ

m.

12. The support tool according to claim 11, wherein the surface roughness Ra of at least the portion of the support plate which contacts the substrate is set from 1.5 μ

m to 1,000 μ

m.

13. The support tool according to claim 11, wherein the surface roughness Ra of at least the portion of the support plate which contacts the substrate is set from 2 μ

m to 1,000 μ

m.

14. The support tool according to claim 11, wherein the diameter of the substrate is 300 mm, and the diameter of the support plate is 190 mm to 220 mm.

15. The support tool according to claim 11, wherein the main body is made of silicon carbide, and the support plate is made from silicon or silicon carbide.

16. The support tool according to claim 11, wherein a layer of silicon oxide, silicon carbide, or silicon nitride is formed on the surface of the support plate.

17. The support tool according to claim 11, wherein at least one through hole is formed in the support plate.

18. A support plate for supporting a substrate when the substrate is heat treated, wherein the diameter of the support plate is 63 to 73 percent of the diameter of the substrate and the surface roughness Ra of at least a portion of the support plate which contacts the substrate is set from 1 μ

m to 1,000 μ

m.

19. The support plate according to claim 18, wherein the surface roughness Ra of at least the portion of the support plate which contacts the substrate is set from 1.5 μ

m to 1,000 μ

m.

20. The support plate according to claim 18, wherein the surface roughness Ra of at least the portion of the support plate which contacts the substrate is set from 2 μ

m to 1,000 μ

m.

21. The support plate according to claim 18, wherein the diameter of the substrate is 300 mm, and the diameter of the support plate is 190 mm to 220 mm.

22. The support plate according to claim 18, wherein the support plate is made from silicon or silicon carbide.

23. The support plate according to claim 18, wherein a layer of silicon oxide, silicon carbide, or silicon nitride is formed on the surface of the support plate.

24. The support plate according to claim 18, wherein at least one through hole is formed in the support plate.