Control of ion angular distribution function at wafer surface

• US 7,867,409 B2
• Filed: 03/29/2007
• Issued: 01/11/2011
• Est. Priority Date: 03/29/2007
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Brcka, Jozef
• Primary Examiner(s): Ahmed; Shamim
• Application Number:
  US11/693,010
• Publication Number:
  US 20080242065A1
• Time in Patent Office: 1,384 Days
• Field of Search: 427/8, 427/569, 216/59, 216/67, 156/345.43, 438/706, 438/710
• US Class Current: 216/59
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01J 37/32706 Polarising the substrate

Abstract

A manufacturing method and apparatus for IC fabrication controls the ion angular distribution at the surface of a wafer with electrodes in a wafer support that produce electric fields parallel to the wafer surface without disturbing plasma parameters beyond the wafer surface. The ion angular distribution function (IADF) at the wafer surface is controlled for better feature coverage or etching. Grid structure is built into the substrate holder within the coating at the top of the holder. The grid components are electrically biased to provide electric fields that combine with the sheath field to distribute the ion incidence angles from the plasma sheath onto the wafer. The grid can be dynamically biased or phased to control uniformity of the effects.

Claims

1. A method of controlling the angular distribution of ions incident onto the surface of a semiconductor wafer on an RF biased substrate holder during plasma processing, comprising:

applying opposite and alternating potentials across pairs of conductors below the wafer supporting surface of a substrate holder in a plasma processing apparatus, wherein the pairs of conductors lie in a plane parallel to the wafer supporting surface;

creating with the applied opposite and alternating potentials, at one or more points on the wafer supporting surface, an electric field directed parallel to the surface of a semiconductor wafer supported on the substrate holder; and

impinging ions from a plasma across a plasma sheath and through the created electric field onto the surface of the semiconductor wafer while controlling the applied opposite and alternating potentials to affect the angular distribution of ions impinging onto the semiconductor wafer over the one or more points on the wafer supporting surface.

2. The method of claim 1 wherein:

the applying of opposite and alternating potentials includes varying the potentials applied across different pairs of conductors below the wafer supporting surface of the substrate holder, to create changing electric fields parallel to the surface of the semiconductor wafer at the one or more points on the wafer supporting surface.

3. The method of claim 2 wherein:

the applying of opposite and alternating potentials includes switching or phasing the application of opposite and alternating potentials among different pairs of conductors, to create electric fields parallel to the surface of the semiconductor wafer across the surface of the wafer.

4. The method of claim 3 wherein:

the applying of opposite and alternating potentials includes switching or phasing the application of opposite and alternating potentials differently among different pairs of conductors of each of two different coordinate sets of conductors below the wafer supporting surface of the substrate holder; and

the creating of the electric field parallel to the surface of a semiconductor wafer includes creating changing electric fields parallel to the surface of the semiconductor wafer in two dimensions parallel to the surface of a semiconductor wafer supported on the substrate holder.

5. The method of claim 2 wherein:

the applying of opposite and alternating potentials includes differently varying the potentials applied across different pairs of conductors of each of two different coordinate sets of conductors below the wafer supporting surface of the substrate holder; and

the creating of the electric field parallel to the surface of a semiconductor wafer includes creating changing electric fields parallel to the surface of the semiconductor wafer in two dimensions parallel to the surface of a semiconductor wafer supported on the substrate holder.

6. The method of claim 1 wherein:

the applying of opposite and alternating potentials includes applying opposite and alternating potentials across pairs of conductors of each of two different coordinate sets of conductors below the wafer supporting surface of the substrate holder; and

the creating of an electric field parallel to the surface of a semiconductor wafer includes creating with the applied opposite and alternating potentials at the one or more points on the wafer supporting surface, an electric field in two dimensions parallel to the surface of the semiconductor wafer supported on the substrate holder.

7. The method of claim 1 further comprising:

providing a plurality of conductors in each of two dimensions below the surface of the substrate holder;

applying signals to first conductors in each dimension and inverted signals to second conductors in each dimension to create electric fields parallel to the surface of the semiconductor wafer over areas on the surface of the semiconductor wafer between the first and the second conductors.

8. The method of claim 7 further comprising:

applying signals to third conductors in each dimension and inverted signals to fourth conductors in each dimension to create electric fields parallel to the surface of the semiconductor wafer over areas on the surface of the semiconductor wafer between the third and the fourth conductors; and

controlling the applying of the signals between the first and the second conductors in each dimension to create electric fields parallel to the surface of the semiconductor wafer over the third and the fourth conductors, and

controlling the applying of the signals between the third and the fourth conductors in each dimension to create electric fields parallel to the surface of the semiconductor wafer over the first and the second conductors.

9. The method of claim 7 wherein:

controlling the applying of the signals includes controlling the applying of the signals between different conductors in each dimension to create electric fields parallel to the surface of the semiconductor wafer across areas between the conductors and over the conductors.

10. The method of claim 7 wherein:

controlling the applying of the signals includes controlling the applying of the signals between different conductors in each dimension to create time-averaged electric fields parallel to the surface of the semiconductor wafer that are generally uniform across areas between the conductors and over the conductors.

11. The method of claim 7 wherein:

controlling the applying of the signals includes controlling the applying of the signals between different conductors in each dimension to create electric fields parallel to the surface of the semiconductor wafer that are present during at least a portion of a control cycle and across areas between and over the conductors.

12. The method of claim 1 further comprising:

applying an RF bias potential to the semiconductor wafer on the substrate holder by energizing the pairs of conductors.

13. The method of claim 1 further comprising:

electrostatically clamping the semiconductor wafer to the substrate holder by applying electrostatic potentials to the pairs of conductors.

14. The method of claim 1 further comprising:

applying the opposite and alternating potentials with an alternating potential generator connected across the pairs of the conductors and producing the electric field close to and parallel to the semiconductor wafer.

15. The method of claim 14 wherein:

the applying of the opposite and alternating potentials with the alternating potential generator includes applying the electric field differently in two dimensions parallel to the semiconductor wafer.

16. The method of claim 15 further comprising:

controlling the alternating potential generator to change the electric fields in the two dimensions across the semiconductor wafer, and to phase the electric fields in the two dimensions to increase the uniformity of the average electric field in all directions across the semiconductor wafer.

17. The method of claim 7 wherein:

the applying of the signals includes applying the signals to the plurality of conductors differently in each dimension, to affect the angular distribution of ions impinging onto the semiconductor wafer differently in two dimensions parallel to the semiconductor wafer.

18. The method of claim 8 wherein:

the applying of the signals includes applying the signals to the plurality of conductors differently in each dimension, to affect the angular distribution of ions impinging onto the semiconductor wafer differently in two dimensions parallel to the semiconductor wafer.

19. The method of claim 9 wherein:

the applying of the signals includes applying the signals to the plurality of conductors differently in each dimension.

20. The method of claim 10 wherein:

the applying of the signals includes applying the signals to the plurality of conductors differently in each dimension.