Forming inductor and transformer structures with magnetic materials using damascene processing for integrated circuits
First Claim
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1. A method comprising:
- forming a first layer of magnetic material in an opening in a first dielectric layer;
forming a barrier layer in a first via opening disposed in the first dielectric layer and then forming a conductive material on the barrier layer;
forming a second dielectric layer on the first magnetic layer;
forming at least one second via opening and at least one conductive structure opening in the second dielectric layer;
forming a barrier layer in the at least one second via opening and in the at least one conductive structure opening, and then forming a conductive material in the at least one second via opening and in the at least one conductive structure opening;
forming a third layer of dielectric material on the conductive material in the conductive structure opening;
forming an opening in the third dielectric layer; and
forming a second layer of magnetic material in the opening, wherein the first and second layers of the magnetic material are coupled to one another.
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Abstract
Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a first layer of magnetic material and at least one via structure disposed in a first dielectric layer, forming a second dielectric layer disposed on the first magnetic layer, forming at least one conductive structure disposed in the second dielectric layer, forming a third layer of dielectric material disposed on the conductive structure, forming a second layer of magnetic material disposed in the third layer of dielectric material and in the second layer of dielectric material, wherein the first and second layers of the magnetic material are coupled to one another.
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Citations
9 Claims
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1. A method comprising:
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forming a first layer of magnetic material in an opening in a first dielectric layer; forming a barrier layer in a first via opening disposed in the first dielectric layer and then forming a conductive material on the barrier layer; forming a second dielectric layer on the first magnetic layer; forming at least one second via opening and at least one conductive structure opening in the second dielectric layer; forming a barrier layer in the at least one second via opening and in the at least one conductive structure opening, and then forming a conductive material in the at least one second via opening and in the at least one conductive structure opening; forming a third layer of dielectric material on the conductive material in the conductive structure opening; forming an opening in the third dielectric layer; and forming a second layer of magnetic material in the opening, wherein the first and second layers of the magnetic material are coupled to one another. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification