Post structure, semiconductor device and light emitting device using the structure, and method for forming the same

• US 7,867,885 B2
• Filed: 02/22/2007
• Issued: 01/11/2011
• Est. Priority Date: 03/23/2006
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Electronics, Inc. (LG Corporation), LG Innotek Company Limited (LG Corporation)
• Inventors: Bae, Duk Kyu
• Primary Examiner(s): Toledo; Fernando L
• Assistant Examiner(s): Singal; Ankush k
• Application Number:
  US11/709,153
• Publication Number:
  US 20070224831A1
• Time in Patent Office: 1,419 Days
• Field of Search: 438/597
• US Class Current: 438/597
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H10B 12/03 Making the capacitor or connections thereto

Abstract

A nanometer-scale post structure and a method for forming the same are disclosed. More particularly, a post structure, a light emitting device using the structure, and a method for forming the same, which is capable of forming a nanometer-scale post structure having a repetitive pattern by using an etching process, are disclosed. The method includes forming unit patterns on a substrate by use of a first material, growing a wet-etchable second material on the substrate formed with the unit patterns, and wet etching the substrate having the grown second material.

Claims

1. A light emitting device, comprising:

a semiconductor structure having a first surface and a second surface;

a light extraction structure including a plurality of holes arranged on the first surface of the semiconductor structure, and a transparent material disposed inside at least one of the plurality of holes;

a first electrode located on the second surface of the semiconductor structure;

a second electrode located on the first surface of the semiconductor structure; and

a supporting layer located on the first electrode, the supporting layer including a metallic element or a semiconductor element,

wherein the transparent material comprises a dielectric,

wherein a part of the transparent material extends outside of the at least one hole and has an inclined portion with respect to the first surface, and

wherein the transparent material is configured to enhance a light extraction efficiency of the light emitting device.

2. The light emitting device according to claim 1, wherein the semiconductor structure comprises:

a first conductive semiconductor layer;

a light emitting layer located on the first conductive semiconductor layer; and

a second conductive semiconductor layer located on the light emitting layer.

3. The light emitting device according to claim 1, wherein a vertical cross section of the part of the transparent material has one of an arc shape, a partial elliptical shape, and a trapezoidal shape.

4. The light emitting device according to claim 1, wherein the inclined portion is located proximate to a wall inside of the at least one hole.

5. The light emitting device according to claim 1, wherein the dielectric is an oxide or a nitride.

6. The light emitting device according to claim 1, wherein the transparent material comprises silicon oxide (SiO₂) or silicon nitride (SiN).

7. The light emitting device according to claim 1, wherein the part of the transparent material has a surface substantially parallel with the first surface.

8. The light emitting device according to claim 1, wherein the second electrode is located on a substantially flat portion of the first surface.

9. The light emitting device according to claim 1, wherein the plurality of holes are periodically distributed.

10. The light emitting device according to claim 1, wherein the first electrode comprises:

a first conductive electrode; and

a reflective electrode located on the first conductive electrode.

11. The light emitting device according to claim 1, further comprising:

a metal pad on the supporting layer.

12. The light emitting device according to claim 1, wherein the semiconductor structure comprises GaN-based semiconductor layers.

13. The light emitting device according to claim 1, wherein the part of the transparent material is configured to enhance the light extraction efficiency of the device.

14. The light emitting device according to claim 1, wherein the transparent material is entirely filled inside of the at least one hole.

15. The light emitting device according to claim 1, wherein the inclined portion has a substantially flat surface.

16. The light emitting device according to claim 1, wherein the inclined portion contacts a wall inside of the at least one hole.

17. The light emitting device according to claim 1, wherein a size scale of the at least one hole is micro-meter scale or nano-meter scale.

18. The light emitting device according to claim 1, wherein a wall inside of the at least one hole is substantially perpendicular to the first surface.

19. The light emitting device according to claim 1, wherein areas of the first surface and the second surface are substantially identical.

20. The light emitting device according to claim 1, wherein a surface area of the supporting layer facing the semiconductor structure is substantially identical to an area of the second surface.

21. The light emitting device according to claim 1, wherein the supporting layer contacts the first electrode.

22. The light emitting device according to claim 1, wherein the second electrode is located on the transparent material.

23. The light emitting device according to claim 1, wherein the transparent material is partially disposed on the first surface.