High quality silicon oxide films by remote plasma CVD from disilane precursors
First Claim
1. A method of depositing a silicon and nitrogen containing film on a substrate, the method comprising:
- introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms;
generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber; and
introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate, wherein the silicon and nitrogen containing film is flowable during deposition.
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Abstract
A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.
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Citations
16 Claims
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1. A method of depositing a silicon and nitrogen containing film on a substrate, the method comprising:
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introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms; generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber; and introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate, wherein the silicon and nitrogen containing film is flowable during deposition. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification