Photovoltaic device
First Claim
1. A method of forming a photovoltaic device comprising a multiple quantum well portion comprising a plurality of quantum wells and a plurality of barriers, the quantum wells and barriers being disposed on an underlying layer, the barriers alternating with the quantum wells, one of the plurality of quantum wells and the plurality of barriers comprised of tensile strained layers and the other of the plurality of quantum wells and the plurality of barriers comprised of compressively strained layers, the tensile and compressively strained layers having elastic properties, comprising:
- selecting compositions and thicknesses of the barriers and quantum wells using an equation taking into account the elastic properties of the tensile strained layers and the compressively strained layers such that each period of one tensile strained layer and one compressively strained layer exerts substantially no shear force on a neighboring structure;
providing the underlying layer; and
forming the quantum wells and barriers on the underlying layer according to the derived compositions and thicknesses.
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Accused Products
Abstract
A method of forming a photovoltaic device includes a plurality of quantum wells and a plurality of barriers. The quantum wells and barriers are disposed on an underlying layer. The barriers alternate with the quantum wells. One of the plurality of quantum wells and the plurality of barriers is comprised of tensile strained layers and the other of the plurality of quantum wells and the plurality of barriers is comprised of compressively strained layers. The tensile and compressively strained layers have elastic properties. The method includes selecting compositions and thicknesses of the barriers and quantum wells taking into account the elastic properties such that each period of one tensile strained layer and one compressively strained layer exerts substantially no shear force on a neighboring structure; providing the underlying layer; and forming the quantum sells and barriers on the underlying layer according to the derived compositions and thicknesses.
31 Citations
40 Claims
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1. A method of forming a photovoltaic device comprising a multiple quantum well portion comprising a plurality of quantum wells and a plurality of barriers, the quantum wells and barriers being disposed on an underlying layer, the barriers alternating with the quantum wells, one of the plurality of quantum wells and the plurality of barriers comprised of tensile strained layers and the other of the plurality of quantum wells and the plurality of barriers comprised of compressively strained layers, the tensile and compressively strained layers having elastic properties, comprising:
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selecting compositions and thicknesses of the barriers and quantum wells using an equation taking into account the elastic properties of the tensile strained layers and the compressively strained layers such that each period of one tensile strained layer and one compressively strained layer exerts substantially no shear force on a neighboring structure; providing the underlying layer; and forming the quantum wells and barriers on the underlying layer according to the derived compositions and thicknesses. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of forming a photovoltaic device comprising:
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forming a plurality of alternating tensile strained layers and compressively strained layers on an underlying layer of material, the alternating layers comprising barriers and quantum wells having compositions and thicknesses selected based on their elastic properties; wherein each period of one tensile strained layer and one compressively strained layer exerts substantially no shear force on a neighboring structure. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A method of forming a photovoltaic device comprising:
forming a plurality of alternating layers of quantum wells and barriers, wherein the alternating layers alternate between tensile strained layers and compressively strained layers, the tensile strained layers and the compressively strained layers having compositions selected based on the elastic properties thereof such that a period of one tensile strained layer and one compressively strained layer exerts substantially no shear force on a neighboring structure, and wherein the number of quantum wells is between 30 and 60. - View Dependent Claims (33, 34, 35, 36, 37, 38, 39, 40)
Specification