Semiconductor component arrangement comprising a trench transistor

• US 7,868,363 B2
• Filed: 03/07/2007
• Issued: 01/11/2011
• Est. Priority Date: 03/07/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Krischke, Norbert, Hirler, Franz, Zundel, Markus
• Primary Examiner(s): NGUYEN, THANH T
• Application Number:
  US11/715,275
• Publication Number:
  US 20070215920A1
• Time in Patent Office: 1,406 Days
• Field of Search: 257327-334, 257/288, 257/E29.027, 257/E29.121
• US Class Current: 257/288
• CPC Class Codes: H01L 21/743 Making of internal connections, substrate contacts
• CPC Class Codes: H01L 27/0733 in combination with capacitors only
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7804 the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7809 having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7816 Lateral DMOS transistors, i.e. LDMOS transistors
• CPC Class Codes: H01L 29/945 Trench capacitors

Abstract

Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least a gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises an at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.

Claims

1. A semiconductor component arrangement comprising:

a semiconductor body having a first side and a second side;

a trench transistor structure integrated in the semiconductor body, the trench transistor structure comprising at least one trench and at least one gate electrode positioned in said at least one trench;

at least one electrode structure disposed in at least one further trench, the at least one electrode structure comprising at least one electrode, wherein at least one section of the at least one electrode has the same geometrical basic structure as the at least one gate electrode; and

at least two terminal contacts arranged in the semiconductor body or on the semiconductor body, the at least two terminal contacts electrically conductively connected to one another by at least one electrically conductive connection line, wherein the at least one electrically conductive connection line is arranged as at least one trench connection line formed by the electrode structure.

2. The semiconductor component arrangement of claim 1, further comprising an insulation layer, wherein the insulation layer comprises a layer stack having at least two layers composed of an insulation material.

3. The semiconductor component arrangement of claim 1, in wherein the at least one trench connection line comprises a doped polycrystalline semiconductor material, a semiconductor-metal compound or a metal.

4. The semiconductor component arrangement of claim 1, wherein the at least one trench connection line comprises at least two trench connection lines arranged in a trench.

5. The semiconductor component arrangement of claim 4, wherein the at least two trench connection lines are arranged in a manner spaced apart from one another in a vertical direction of the semiconductor body.