Inter-helix inductor devices

• US 7,868,727 B2
• Filed: 06/05/2008
• Issued: 01/11/2011
• Est. Priority Date: 08/14/2007
• Status: Expired due to Fees

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Chen, Chang-Sheng, Chen, Wei-Ting, Wei, Chang-Lin, Shyu, Chin-Sun
• Primary Examiner(s): Mai; Anh T
• Assistant Examiner(s): LIAN, MANG TIN BIK
• Application Number:
  US12/133,717
• Publication Number:
  US 20090045904A1
• Time in Patent Office: 950 Days
• Field of Search: None
• US Class Current: 336/200
• CPC Class Codes: H01F 17/0013 with stacked layers
• CPC Class Codes: H01F 2017/002 Details of via holes for interconnecting the layers
• CPC Class Codes: H01F 2017/004 with the coil helically wound around an axis without a core

Abstract

The invention is directed to inter-helix inductor devices. The inter-helix inductor device includes a dielectric substrate. An input end is disposed on the first surface of the dielectric substrate. A clockwise winding coil has one end connecting to the input end and at least one winding turn through the dielectric substrate. A counter clockwise winding coil includes at least one winding turn through the dielectric substrate, wherein the clockwise and counter clockwise winding coils are connected by an interconnection. An output end is disposed on the dielectric substrate, connects one end of the counter clockwise winding coil, and is adjacent to the input end.

Claims

1. An inter-helix inductor device, comprising:

a multi-layered dielectric substrate;

a first terminal disposed on the first surface of the dielectric substrate;

a first inter-helix spiral coil comprising;

a first clockwise winding coil with one end connecting to the first terminal and with at least one winding turn through the multi-layered dielectric substrate; and

a first counter clockwise winding coil having at least one winding turn through the multi-layered dielectric substrate and inter-wound with the first clockwise winding coil, wherein the first clockwise and first counter clockwise winding coils are connected by a first interconnection;

a second inter-helix spiral coil comprising;

a second clockwise winding coil with at least one winding turn through the multi-layered dielectric substrate; and

a second counter clockwise winding coil having at least one winding turn through the multi-layered dielectric substrate and inter-wound with the second clockwise winding coil, wherein the second clockwise and second counter clockwise winding coils are connected by a second interconnection;

a third interconnection connecting the first inter-helix spiral coil and the second inter-helix spiral coil; and

a second terminal disposed on the dielectric substrate, connecting one end of the second counter clockwise winding coil, and being adjacent to the first terminal,

wherein the first, the second and the third interconnections pass through the multi-layered dielectric substrate.

2. The inter-helix inductor device as claimed in claim 1, wherein the multi-layered dielectric substrate comprise a composite-substrate made of multiple materials.

3. The inter-helix inductor device as claimed in claim 1, wherein the multi-layered dielectric substrate comprises a polymer substrate, a ceramic substrate, or a semiconductor substrate.

4. The inter-helix inductor device as claimed in claim 1, wherein the multi-layered dielectric substrate comprises multiple layers of dielectric layers.

5. The inter-helix inductor device as claimed in claim 4, further comprising a bottom layer disposed underlying the multi-layered dielectric substrate, wherein the first, second, and third interconnections are formed by a stacking hole process comprising a through hole process, a blind hole process, or a buried hole process and is formed between different dielectric layers.

6. The inter-helix inductor device as claimed in claim 4, further comprising a top layer disposed overlying the multi-layered dielectric substrate, wherein the first, second, and third interconnections are formed by a stacking hole process comprising a through hole process, a blind hole process, or a buried hole process and is formed between different dielectric layers.

7. The inter-helix inductor device as claimed in claim 4, further comprising a bottom layer disposed underlying the multi-layered dielectric substrate and a top layer disposed overlying the multi-layered dielectric substrate respectively, wherein the first, second, and third interconnections are formed by a stacking hole process comprising a through hole process, a blind hole process, or a buried hole process and is formed between different dielectric layers.

8. The inter-helix inductor device as claimed in claim 1, wherein the multi-layered dielectric substrate comprises a circuit with at least one active device or passive device.

9. The inter-helix inductor device as claimed in claim 1, wherein the first terminal is an input end, and the second terminal is an output end.