Method and apparatus for manufacturing stacked-type semiconductor device

• US 7,871,856 B2
• Filed: 08/10/2005
• Issued: 01/18/2011
• Est. Priority Date: 08/11/2004
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Yoshimura, Atsushi
• Primary Examiner(s): TSAI, H JEY
• Application Number:
  US11/200,037
• Publication Number:
  US 20060038275A1
• Time in Patent Office: 1,987 Days
• Field of Search: 438455-465, 438106-127, 257/E23.04
• US Class Current: 438/106
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 2224/92247 the second connecting process involving a wire connector
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2225/0651 Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06575 Auxiliary carrier between devices, the carrier having no electrical connection structure
• CPC Class Codes: H01L 2225/06582 Housing for the assembly, e.g. chip scale package [CSP]
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA

Abstract

A method of manufacturing a stacked-type semiconductor device, comprises: arranging a plurality of stacked chips obtained by stacking semiconductor chips on a plurality of stages on a support substrate; connecting a semiconductor chip of each stage in each stacked chip and the support substrate by wire while performing heating in units of stacked chips; performing plastic molding of each stacked chip; and separating the stacked chips from each other; an apparatus for manufacturing a stacked-type semiconductor device, comprising divided heater blocks formed under a support substrate on which a plurality of stacked chips obtained by stacking a plurality of semiconductor chips are arranged, the divided heater blocks being formed with respect to the stacked chips, and a heating device to selectively transmit heat to a stacked chip subjected to a wire bonding.

Claims

1. A method of manufacturing a stacked-type semiconductor device, comprising:

arranging a plurality of chip stacks obtained by stacking semiconductor chips on a plurality of stages in one surface direction on a support substrate;

setting the plurality of chip stacks at a preliminary temperature;

heating each of the plurality of chip stacks in sequence at a temperature higher than the preliminary temperature, and connecting a semiconductor chip of each stage in each heated chip stack and the support substrate by wire;

performing plastic molding of each chip stack; and

separating the chip stacks from each other,

wherein the heating in units of chip stacks is performed by divided heater blocks arranged with respect to the chip stacks.

2. The method of manufacturing a stacked-type semiconductor device according to claim 1, wherein the divided heater block is selectively heated in relation to a chip stack to be wire-bonded.

3. The method of manufacturing a stacked-type semiconductor device according to claim 1, wherein the divided heater block is disposed near to a corresponding one of the chip stacks when the corresponding one of the chip stacks is wire-bonded.