Method of forming semiconductor devices containing metal cap layers
First Claim
1. A method of forming a semiconductor device, comprising:
- planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions;
forming metal cap layers on the conductive paths; and
exposing the top surface of the workpiece to a dopant source from a gas cluster ion beam (GCIB) to introduce dopants into at least top portions of the metal cap layers and the dielectric regions to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions;
wherein the dopant source comprises dopants containing P, B, N, F, Cl, Br, Si, or Ge, or a combination thereof.
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Accused Products
Abstract
Methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices containing metal cap layers. According to one embodiment, a method of forming a semiconductor device includes planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions, forming metal cap layers on the conductive paths, and exposing the top surface of the workpiece to a dopant source from a gas cluster ion beam (GCIB) to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions. According to some embodiments, the metal cap layers and the doped metal cap layers contain a noble metal selected from Pt, Au, Ru, Rh, Ir, and Pd.
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Citations
24 Claims
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1. A method of forming a semiconductor device, comprising:
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planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions; forming metal cap layers on the conductive paths; and exposing the top surface of the workpiece to a dopant source from a gas cluster ion beam (GCIB) to introduce dopants into at least top portions of the metal cap layers and the dielectric regions to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions; wherein the dopant source comprises dopants containing P, B, N, F, Cl, Br, Si, or Ge, or a combination thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming a semiconductor device, comprising:
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planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions; selectively forming metal cap layers on the conductive paths relative to the dielectric regions, wherein the metal cap layers contain a noble metal selected from Pt, Au, Ru, Rh, Ir, and Pd; and exposing the top surface of the workpiece to a dopant source containing dopants selected from P, B, N, F, Cl, Br, Si, or Ge, or a combination thereof, from a gas cluster ion beam (GCIB) to introduce the dopants into at least top portions of the metal cap layers and the dielectric regions to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions, each comprising between 0.1 atomic % and 10 atomic % of the dopant. - View Dependent Claims (16, 17, 18, 19)
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20. A method of forming a semiconductor device, comprising:
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planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions; forming metal cap layers on the conductive paths and additional metal on the dielectric regions, wherein the metal cap layers and the additional metal contain a noble metal selected from Pt, Au, Ru, Rh, Ir, and Pd; and exposing the top surface of the workpiece to a dopant source containing dopants selected from P, B, N, F, Cl, Br, Si, or Ge, or a combination thereof, from a gas cluster ion beam (GCIB) to remove at least a portion of the additional metal from the dielectric regions and to introduce the dopants into at least top portions of the metal cap layers and the dielectric regions to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions, each comprising between 0.1 atomic % and 10 atomic % of the dopant. - View Dependent Claims (21, 22, 23, 24)
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Specification