Light-emitting device
First Claim
Patent Images
1. A light-emitting device having a light-emitting element comprising first and second electrodes and a light-emitting layer existing between the first and second electrodes, and a field effect transistor for driving the light-emitting element, whereinan active layer of the field effect transistor comprises an amorphous oxide of a compound having(a) a composition when in crystalline state represented by In2−
- xM3xO3(Zn1−
yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;
(b) an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3 wherein a current between a drain terminal and a source terminal of the field effect transistor when no gate voltage is applied is less than 10 microamperes, and wherein an electron mobility of the amorphous oxide increases when the electron carrier concentration increases; and
(c) controlled oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of the active layer of the amorphous oxide.
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Abstract
An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.
148 Citations
26 Claims
-
1. A light-emitting device having a light-emitting element comprising first and second electrodes and a light-emitting layer existing between the first and second electrodes, and a field effect transistor for driving the light-emitting element, wherein
an active layer of the field effect transistor comprises an amorphous oxide of a compound having (a) a composition when in crystalline state represented by In2− - xM3xO3(Zn1−
yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;(b) an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3 wherein a current between a drain terminal and a source terminal of the field effect transistor when no gate voltage is applied is less than 10 microamperes, and wherein an electron mobility of the amorphous oxide increases when the electron carrier concentration increases; and (c) controlled oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of the active layer of the amorphous oxide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 16, 17)
- xM3xO3(Zn1−
-
15. A light-emitting device having a light-emitting element comprising first and second electrodes and a light-emitting layer existing between the first and second electrodes, and a field effect transistor for driving the light-emitting element, wherein
an active layer of the field effect transistor comprises a transparent amorphous oxide semiconductor having (a) a composition when in crystalline state represented by In2− - xM3xO3(Zn1−
yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;(b) an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein the amorphous oxide semiconductor is capable of realizing a normally off state such that a current between a drain terminal and a source terminal of the field effect transistor when no gate voltage is applied is less than 10 microamperes, and wherein an electron mobility of the amorphous oxide semiconductor increases when the electron carrier concentration increases; and (c) controlled oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of the active layer of the amorphous oxide. - View Dependent Claims (18)
- xM3xO3(Zn1−
-
19. An active matrix display device comprising a light-emitting element comprising first and second electrodes and a light-emitting layer existing between the first and second electrodes and a field effect transistor for driving the light-emitting element, and a picture element circuit arranged into a two-dimensional matrix form, wherein
an active layer of the field effect transistor includes such a transparent amorphous oxide semiconductor having (a) a composition when in crystalline state represented by In2− - xM3xO3(Zn1−
yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;(b) an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein the amorphous oxide semiconductor is capable of realizing a normally off state such that a current between a drain terminal and a source terminal of the field effect transistor when no gate voltage is applied is less than 10 microamperes, and wherein an electron mobility of the amorphous oxide semiconductor increases when the electron carrier concentration increases; and (c) controlled oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of the active layer of the amorphous oxide. - View Dependent Claims (20, 21)
- xM3xO3(Zn1−
-
22. A display article comprising;
a light-emitting element comprising first and second electrodes and a light-emitting layer existing between the first and second electrodes and a field effect transistor for driving the light-emitting element, wherein an active layer of the field effect transistor includes an amorphous oxide semiconductor having (a) a composition when in crystalline state represented by In2−
xM3xO3(Zn1−
yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;(b) an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein a current between a drain terminal and a source terminal of the field effect transistor when no gate voltage is applied is less than 10 microamperes, and wherein an electron mobility of the amorphous oxide semiconductor increases when the electron carrier concentration increases; and (c) controlled oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of the active layer of the amorphous oxide. - View Dependent Claims (23, 24, 25, 26)
Specification