Vertical gallium nitride-based light emitting diode and method of manufacturing the same

• US 7,872,276 B2
• Filed: 05/01/2007
• Issued: 01/18/2011
• Est. Priority Date: 08/23/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung LED Co., Ltd. (Samsung Electronics Co. Ltd.)
• Inventors: Kim, Dong Woo, Oh, Bang Won, Baik, Doo Go, Choi, Seok Beom, Lee, Su Yeol, Yoon, Sang Ho, Jang, Tae Sung, Woo, Jong Gun, Yeo, In Tae
• Primary Examiner(s): Bryant; Kiesha R
• Assistant Examiner(s): Tornow; Mark W
• Application Number:
  US11/742,818
• Publication Number:
  US 20080048206A1
• Time in Patent Office: 1,358 Days
• Field of Search: 257/99, 257/103, 257/676, 257/773
• US Class Current: 257/99
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.

Claims

1. A vertical GaN-based semiconductor LED comprising:

a conductive substrate;

a metal seed layer formed on the conductive substrate;

a current blocking layer formed on a central portion of the metal seed layer;

a first electrode formed on the metal seed layer and on either side of the current blocking layer;

a protective film formed on an outer surface of a light emission structure formed on the first electrode; and

a second electrode formed on the light emission structure,

wherein the conductive substrate includes first and second plated layers and the second plated layer physically contacts and surrounds lower parts and side surfaces of the first plated layer.

2. The vertical GaN-based semiconductor LED according to claim 1,

wherein the light emission structure includes a p-type GaN-based semiconductor layer, an active layer, and an n-type GaN-based semiconductor layer.

3. The vertical GaN-based semiconductor LED according to claim 2,

wherein the n-type GaN-based semiconductor layer has surface irregularities formed on the upper surface thereof.

4. The vertical GaN-based semiconductor LED according to claim 1,

wherein the first electrode is a p-electrode.

5. The vertical GaN-based semiconductor LED according to claim 1,

wherein the second electrode is an n-electrode.

6. The vertical GaN-based semiconductor LED according to claim 1,

wherein the first plated layer has a two-layer structure in which Ni and Au are sequentially laminated.

7. The vertical GaN-based semiconductor LED according to claim 1,

wherein the second plated layer has a three-layer structure in which Au, Ni, and Au are sequentially laminated.