×

Semiconductor ceramic, monolithic semiconductor ceramic capacitor, method for manufacturing semiconductor ceramic, and method for manufacturing monolithic semiconductor ceramic capacitor

  • US 7,872,854 B2
  • Filed: 03/03/2008
  • Issued: 01/18/2011
  • Est. Priority Date: 05/31/2006
  • Status: Active Grant
First Claim
Patent Images

1. A SrTiO3 based grain boundary insulation type semiconductor ceramic comprising:

  • a solid solution with crystal grains, the solid solution containing;

    a donor element within the range of 0.8 to 2.0 mol relative to 100 mol of the Ti element;

    a first acceptor element in an amount less than the amount of the donor element; and

    a second acceptor element within the range of 0.3 to 1.0 mol relative to 100 mol of the Ti element in crystal grain boundaries,wherein an average grain size of the crystal grains is 1.0 μ

    m or less.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×